Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 511-513
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigate the photo-oxidation process and the corresponding passivation effects on the optical properties of unintentionally doped n-type gallium nitride (GaN). When illuminated with a 253.7 nm mercury line source, oxidation of GaN is found to take place in aqueous phosphorus acid solutions with pH values ranging from 3 to 4. At room temperature, the photo-oxidation process is found reaction-rate limited and has a peak value of 224 nm/h at pH=3.5. Compared with the as-grown GaN layers, threefold enhancement in the photocurrent and photoluminescence response are observed on the oxidized GaN surfaces. These results are attributed to the surface passivation effects due to the deep ultraviolet-enhanced wet oxidation on GaN. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125804
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