ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Critical epitaxial thicknesses for low-temperature (20–100 °C) Ge(001)2×1 growth by molecular-beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2512-2516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of Ge(001) by molecular-beam epitaxy at temperatures Ts between 20 and 100 °C, and deposition rates of 0.5 and 1 A(ring) s−1, was investigated using a combination of in situ reflection high-energy electron diffraction and post-deposition cross-sectional transmission electron microscopy. All films consisted of three zones beginning with a defect-free epitaxial layer of thickness t1 in which ln(t1)∝(1/Ts). The second zone was a narrower intermediate layer containing {111} stacking faults and microtwins, while the third zone was amorphous. An atomistic growth model is proposed to explain the observed morphological breakdown during low-temperature growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354691
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial Si(001) grown at 80–750 °C by ion-beam sputter deposition: Crystal growth, doping, and electronic properties (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 769-780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial undoped and Sb-doped Si films have been grown on Si(001) substrates at temperatures Ts between 80 and 750 °C by ultrahigh-vacuum Kr+-ion-beam sputter deposition (IBSD). Critical epitaxial thicknesses te in undoped films were found to range from 8 nm at Ts=80 °C to (approximately-greater-than)1.2 μm at Ts≥300 °C, while Sb incorporation probabilities σSb varied from unity at Ts(approximately-less-than)550 °C to (approximately-equal-to)0.1 at 750 °C. These te and σSb values are approximately one and one to three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Temperature-dependent transport measurements carried out on 1-μm-thick Sb-doped IBSD layers grown at Ts≥350 °C showed that Sb was incorporated into substitutional sites with complete electrical activity and that electron mobilities in films grown at Ts≥400 °C were equal to the best reported results for bulk Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362885
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Crystal growth and electronic properties of ultrahigh vacuum ion-beam sputter deposited Sb-doped Si(001)2×1 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1398-1400 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality homoepitaxial Sb-doped Si(001)2×1 films have been grown on p-type Si(001) substrates by ultrahigh vacuum ion-beam sputter deposition (IBSD) at temperatures Ts between 450 and 750 °C. The load-locked multichamber system is equipped with in situ reflection high-energy electron diffraction. Sputter deposition was carried out using a 1 keV Kr+ ion beam generated by a modified Kaufman-type ion source with post-extraction electrostatic ion optics. All films were 1 μm thick and deposited at a rate of 0.35 μm h−1. Results of plan-view, cross-sectional, and convergent-beam transmission electron microscopy analyses showed that as-deposited films are highly perfect with no visible defects. Sb incorporation probabilities σSb ranged from (approximately-equal-to)0.1 at Ts=750 °C to (approximately-equal-to)1 for Ts≤550 °C with no indication by secondary-ion mass spectrometry (SIMS) of Sb surface segregation. These σSb values are one to three orders of magnitude larger than for coevaporative Sb doping during molecular beam epitaxy where extensive Sb surface segregation is observed. A comparison of calibrated SIMS and Hall-effect measurements established that the incorporated Sb exhibited complete electrical activity. SIMS analyses also showed no detectable Kr (detection limit (approximately-equal-to)5×1017 cm−3). Temperature-dependent (15–300 K) electron mobilities were equal to the best reported bulk Si values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111895
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    p-type zinc-blende GaN on GaAs substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 932-933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report p-type cubic GaN. The Mg-doped layers were grown on vicinal (100) GaAs substrates by plasma-enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron-cyclotron resonance source. p-type zinc-blende-structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x-ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109848
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...