Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1391-1393
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have performed magnetotransport studies on AlGaN/GaN heterostructures at low temperature and magnetic field up to 30 T. The integer quantum Hall effect is observed in two-dimensional electron gas at the AlGaN/GaN interface. From the temperature dependence of the low-field Shubnikov–de Hass oscillations, a carrier effective mass of m*=0.228me is obtained. Dingle plots of our resistivity data show inhomogeneity in the two-dimensional electron gas. Finally, we found that for electronic density as high as 5.47×1012 cm−2, only the lowest subband in the quantum well is occupied. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121954
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