Publication Date:
2015-07-01
Description:
The piezoelectric properties of compositional spread (1 − x)BiFeO 3 -xGaFeO 3 epitaxial thin films are investigated where Ga 3+ substitution for Bi 3+ is attempted in Bi 1−x Ga x FeO 3 compounds. Ga content x was varied from 0 to 12% (atomic). Ferroelectric characterizations are reported at various length scales. Around 6.5% of Ga content, an enhancement of the effective piezoelectric coefficient d 33 eff is observed together with a change of symmetry of the film. Measured d 33 eff values in 135 nm thick films increased from 25 pm/V for undoped BiFeO 3 to 55 pm/V for 6.5% Ga with no extrinsic contribution from ferroelastic domain rearrangement.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
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