Publication Date:
2016-02-09
Description:
We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ∼9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ∼ 2.7 × 10 3 , the power dissipation of the amplifier is 13 μ W, the bandwidth is ∼ 1.3 MHz, and for frequencies above 300 kHz the current noise referred to input is ≤ 70 fA/ Hz . With this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28 Si with 96% visibility.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
Permalink