ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
We describe a silicon anode with integrated electronics for use in photon-counting microchannel-plate (MCP) imaging detectors. Very-large-scale integrated techniques using a 2 μm complementary metal–oxide–semiconductor (CMOS) process allow a passive-anode region, which collects charge from the MCPs, to be surrounded by an active event-processing region. The anode region is made from a rectangular array of pads that are formed using the metal interconnect layers of the CMOS process. Individual pads are electrically connected to form isolated arrays of rows and columns; each row terminates at a well of one charge-coupled device (CCD) register, and each column terminates at a well of a second orthogonal CCD register. The distribution of charge within each register is used to encode the charge-cloud coordinates. A two-dimensional prototype anode was constructed with 128×80 pixels spaced at 50 μm intervals; the anode readout rate is 31 250 Hz. Subpixel centroiding techniques can be employed to reduce the number of pixels that must be read for a given resolution. We envision a rugged, compact, low-power, and low-mass single-substrate imaging anode with a direct (x,y) digital interface. The design offers large array formats with inherent pixel linearity, orthogonality, and stability. An identified upgrade path promises orders-of-magnitude increases in speed (up to 106 photons s−1) and dynamic range, while maintaining large pixel count (〉4000×4000) and MCP pore-limited resolution (〈8 μm). © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1149849
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