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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial structure and dopant redistribution of a tungsten polycide/N+ silicon substrate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2543-2547 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The morphology and redistribution of dopants at the interfaces between silicon-implanted, low-pressure chemical-vapor-deposited silicon films with an n+ single-crystal silicon substrate are described. Using high-resolution transmission electron microscopy, it is shown that silicon implantation definitely lowers the annealing temperature needed to break up the native oxide layer. A post annealing temperature of 900 °C for 30 min, which is acceptable for sub-μm processes, is sufficient to cause the break up of the native oxide layer and the subsequent epitaxial growth through it with the aid of silicon implantation. The depth profile obtained by secondary ion mass spectrometry shows that the implanted dopants were piled up at the interfacial layer after thermal treatment. The redistributed profiles of impurities depend on the concentration of oxygen. The junction depth of the silicon-implanted polysilicon films is shallower than that of the unimplanted films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353088
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Crossed beam study of Na*(2P3/2)+O2→Na++O2−. The dependence of the total cross section upon Na* alignment (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 5981-5982 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The title reaction, and its SO2 analog, have been measured as a function of the laser-prepared Na* p-orbital alignment. Within the 5%–8% experimental error, the total cross section is independent of the alignment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454515
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical inhomogeneity and reactions of BiSrCaCuO surfaces detected by synchrotron imaging spectromicroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2924-2926 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microscopic chemical analysis of BiSrCaCuO (BSCCO) 2212 single crystals was performed with an unprecedented combination of high (submicron) lateral resolution and high energy resolution (100 meV or better). These performances, achieved with imaging synchrotron spectromicroscopy, enabled us to detect in a very small fraction of the investigated specimens, morphological and chemical inhomogeneities. Specifically, we found deviations from stoichiometry in the surface Sr content which have a subtle effect on the chemical environment of at least one other element, Ca. The different chemical environment was found to influence surface chemical reactions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117325
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  • 4
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    The role of particle shape in active depletion (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-11-18
    Description: Using numerical simulations, we study how a solution of small active disks, acting as depletants, induces effective interactions on large passive colloids. Specifically, we analyze how the range, strength, and sign of these interactions are crucially dependent on the shape of the colloids. Our findings indicate that while colloidal rods experience a long-ranged predominantly attractive interaction, colloidal disks feel a repulsive force that is short-ranged in nature and grows in strength with the size ratio between the colloids and active depletants. For colloidal rods, simple scaling arguments are proposed to characterize the strength of these induced interactions.
    Print ISSN: 0021-9606
    Electronic ISSN: 1089-7690
    Topics: Chemistry and Pharmacology , Physics
    Published by American Institute of Physics (AIP)
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