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Epitaxial growth of silicon with Hg-Xe lamp light irradiation (1985)

Ishitani, Akihiko ; Kanamori, Masaru ; Tsuya, Hideki

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 2956-2959

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: An epitaxial silicon film was successfully grown on a Si {100} substrate at the susceptor temperature of 730 °C in the SiH2Cl2/H2 system. Irradiation with a mercury-xenon (Hg-Xe) lamp during deposition appeared to be essential for obtaining the epitaxial film. Surface cleaning in the experiment was done by preannealing the substrate in H2 at 730 °C with Hg-Xe lamp light irradiation. The film was characterized by etching, electron channeling pattern observation, Raman scattering spectroscopy, and spreading resistance measurement.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.335238

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