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  • American Institute of Physics (AIP)  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of beryllium-implanted Mg-doped GaN (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1881-1887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the electrical and optical characteristics of beryllium implanted Mg-doped GaN materials. The Mg-doped GaN samples were grown by metalorganic chemical vapor deposition system and implanted with Be ions at two different energies of 50 and 150 keV and two different doses of about 1013 and 1014 cm−2. The implanted samples were subsequently rapidly thermal annealed at 900, 1000, and 1100 °C for various periods. The annealed samples showed an increase of hole concentration by three orders of magnitude from nonimplanted value of 5.5×1016 to 8.1×1019 cm−3 as obtained by Hall measurement. The high hole concentration samples also showed low specific resistance ohmic contact of about 10−3 Ω cm2 and 10−6 Ω cm2 using Ni/Au and Ni/Pd/Au metallization, respectively, without any further annealing process. It is also found from the temperature dependent photoluminescence that the activation energy of Mg dopants of the Be implanted samples has an estimated value of about 170 meV, which is nearly 30% lower than the as-grown samples of about 250 meV. The crystal quality and surface morphology of the Be implanted samples measured by x-ray diffraction and atomic force microscopy show no obvious degradation in the crystal quality and surface morphology. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494110
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  • 2
    Electronic Resource
    Electronic Resource
    Improved stability of thin cobalt disilicide films using BF2 implantation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2920-2922 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of ∼50 nm CoSi2 and TiSi2 thin films after BF2+ implantation was investigated. The electrical characteristics of silicide films were evaluated after high temperature annealing as a function of implanted BF2+ energy. It was observed that implantation with a projected range near the silicide/silicon interface produced the most stable films. The silicide/silicon interface morphology was investigated using scanning tunneling microscopy, where with appropriate BF2 implantation conditions, smoother interfaces were seen after high temperature annealing. The stabilizing effect is attributed to fluorine segregation into the silicide grain boundaries and at the silicide/silicon interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108022
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  • 3
    Electronic Resource
    Electronic Resource
    Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3423-3425 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, a low-resistance ohmic contact on p-type GaN using an alloy of Ni/Pd/Au is reported. The Mg doped p-type GaN samples were grown by metalorganic chemical vapor deposition with a carrier concentration of 4.1×1017 cm−3. The as-grown Mg doped samples were deposited with Ni (20 nm)/Pd (20 nm)/Au (100 nm) and then annealed in air, nitrogen, and oxygen ambient conditions at different annealing temperatures ranging from 350 to 650 °C. Linear I–V ohmic characteristics were observed with specific resistance as low as 1.0×10−4 Ω cm2 for the samples annealed in oxygen atmosphere. Similar contact metal composition was also deposited on Be-implanted p-type GaN samples with a carrier density of 8.1×1019 cm−3. Without further annealing process, the samples show good ohmic contact with a lowest specific resistance of 4.5×10−6 Ω cm2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1327276
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