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  • American Institute of Physics (AIP)  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Structural properties of cubic GaN epitaxial layers grown on β-SiC (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6322-6328 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-consistent tight-binding total energy calculations are performed to study the deposition of a few layers of cubic GaN on (100) β-SiC substrates. Cohesion energies, atomic displacements, dangling bond occupancies and surface reconstructions are calculated for a variety of epitaxial systems including monolayers of either Ga or N as well as single and double bilayers of GaN on either Si or C terminated substrates. The SiC substrates and Ga-N epitaxial layers are represented by 2×2 supercells of 9 Si and C monolayers plus the respective number of monolayers of Ga and N atoms. Depending on the system, surface atoms dimerize either symmetrically or asymmetrically resulting in either 2×1, c-2×2, or 2×2 surface reconstructions. At the substrate-epitaxial-layer interfaces, N binds stronger than Ga to either Si or C. Interface mixing is found to be energetically not advantageous for both C- and Si-terminated substrates, although for the latter the obtained small energy differences may suggest the possibility of mixing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363710
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  • 2
    Electronic Resource
    Electronic Resource
    Structural properties and Raman modes of zinc blende InN epitaxial layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 362-364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on x-ray diffraction and micro-Raman scattering studies on zinc blende InN epitaxial films. The samples were grown by molecular beam epitaxy on GaAs(001) substrates using a InAs layer as a buffer. The transverse-optical (TO) and longitudinal-optical phonon frequencies at Γ of c-InN are determined and compared to the corresponding values for c-GaN. Ab initio self-consistent calculations are carried out for the c-InN and c-GaN lattice parameters and TO phonon frequencies. A good agreement between theory and experiment is found. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123072
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  • 3
    Electronic Resource
    Electronic Resource
    Spinodal decomposition in BxGa1−xN and BxAl1−xN alloys (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1177-1179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present first-principles calculations of the structural and thermodynamic properties of cubic BxGa1−xN and BxAl1−xN alloys. The calculations are based on the generalized quasichemical approach to disorder and composition effects and a pseudopotential-plane-wave approximation. The bulk moduli and lattice constants are found to vary linearly with the alloy composition. Due to the large lattice mismatch between BN and binaries GaN and AlN, the phase diagrams display large miscibility gaps in the temperature range usually adopted to grow the corresponding alloys. This explains the difficulties reported in growing these alloys with boron content higher than 0.1. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450261
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  • 4
    Electronic Resource
    Electronic Resource
    Phase separation suppression in InGaN epitaxial layers due to biaxial strain (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 769-771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase separation suppression due to external biaxial strain is observed in InxGa1−xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1−xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436270
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