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  • American Institute of Physics (AIP)  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Domain boundary control of edge roughness in vicinal Si(001) (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 822-824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Steps on vicinal Si(001) miscut toward 〈110〉 directions are known to be alternately rough and smooth. It is shown that a significant contribution to the local meandering of the rough edge, so-called "kissing sites,'' are nonthermodynamic. They are caused by surface antiphase domains that are created during surface cleaning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104500
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic structure classifications using scanning tunneling microscopy conductance imaging (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2487-2496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of atomic surfaces is imaged by applying multivariate image classification techniques to multibias conductance data measured using scanning tunneling microscopy. Image pixels are grouped into classes according to shared conductance characteristics. The image pixels, when color coded by class, produce an image that chemically distinguishes surface electronic features over the entire area of a multibias conductance image. Such "classed" images reveal surface features not always evident in a topograph. This article describes the experimental technique used to record multibias conductance images, how image pixels are grouped in a mathematical, classification space, how a computed grouping algorithm can be employed to group pixels with similar conductance characteristics in any number of dimensions, and finally how the quality of the resulting classed images can be evaluated using a computed, combinatorial analysis of the full dimensional space in which the classification is performed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368409
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of interfacial hydrogen on Al thin film nucleation on Si (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4690-4694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use scanning tunneling microscopy to study the coverage-dependent effects of hydrogen on Al thin film nucleation on Si(100). Using a quench-and-look procedure we find that small amounts of H affect Al island structure. Specifically, Al films deposited onto Si having 0.15 monolayer of adsorbed monohydride show an increased island density and a preponderance of small (≤4 atom) clusters, compared with growth on clean Si. We interpret this to be a result of reduced Al adatom diffusion lengths due to site blocking or trapping. Also, the effects of a full monolayer of hydrogen on Al thin film morphology are studied. Al deposited onto Si(100) terminated with a layer of monohydride forms three-dimensional islands, unlike growth on clean Si. Although a change in growth morphology is observed in thin Al films, the out-of-plane crystal texture of thick Al films (300–1000 Å) is unaffected by a monolayer of interfacial hydrogen. Hydrogen is not present at a Si–Al interface after thick film growth at 100 °C on fully passivated substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367256
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  • 4
    Electronic Resource
    Electronic Resource
    Selective area growth of metal nanostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2210-2212 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-scale metal lines are fabricated onto Si(100) substrates by scanning tunneling microscope (STM) based lithography and subsequent chemical vapor deposition. An STM tip is first used to define areas for metal layer growth by electron stimulated desorption of adsorbed hydrogen. Exposure to Fe(CO)5 at 275 °C results in preferential deposition of Fe onto Si dangling bond sites (i.e., depassivated areas defined by the STM tip), while the monohydride resist remains intact in surrounding areas. Fe metal lines with widths ∼10 nm are constructed using this selective-area, autocatalytic growth technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115861
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  • 5
    Electronic Resource
    Electronic Resource
    Model diffraction profiles parallel to rough step edges (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2848-2852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modeling of rough step edges has been made and compared with scanning tunneling microscopy (STM) micrographs. In this paper, we use a phenomenological Hamiltonian to calculate diffraction profiles which can be used to determine the extent of step-edge meandering. Comparison with experiment is made based on a parametrization of the step statistics obtained from STM data of silicon (001) step edges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345454
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