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  • 1
    Electronic Resource
    Electronic Resource
    A new impedance spectrometer for the investigation of electrochemical systems (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5366-5372 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The development of a computer-controlled electrochemical impedance spectrometer, based on a Fourier transform algorithm is described. Together with a fast potentiostat the system can be used in the frequency range 1 mHz to 100 kHz. The perturbation signal is a superposition of sine waves with properly chosen frequencies. The overall measurement time is limited only by the lowest frequency in the spectrum and by the data transfer to the computer, thus, time-resolved impedance spectra measurements can be performed. The principle of operation and technical details are presented and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143404
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  • 2
    Electronic Resource
    Electronic Resource
    Optimization of the perturbation signal for electrochemical impedance spectroscopy in the time domain (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3111-3115 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The choice of the perturbation wave form is of crucial importance for reliable electrochemical impedance spectroscopy measurements based on the fast Fourier transformation. Using numerical simulation, arguments and results are presented for the choice and the optimization of a perturbation signal constructed as a superposition of discrete sine waves with selected frequencies. Two possible ways to optimize the perturbation for better noise immunity are described: choosing proper values for the phases of the individual sine waves, minimal perturbation signal amplitudes can be obtained which improve the quality of impedance data by 25%. By introducing response-sensitive amplitudes an improvement in the quality of data by a factor of 4–5 can be reached in the low frequency range. A new technique for single-pulse measurements with continuous perturbations that assures a steady-state response and better accuracy at high capacitive and/or inductive samples is also described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144316
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  • 3
    Electronic Resource
    Electronic Resource
    Aluminum gettering of cobalt in silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4432-4433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the gettering effect of an evaporated aluminum layer on single crystalline and cast multicrystalline silicon doped with radioactive cobalt-57 by means of radiotracer methods and Mössbauer spectroscopy. We present evidence that aluminum gettering works at high temperatures and transfers the cobalt atoms from the Si bulk to the liquid Al-Si phase. Presumably Al gettering can be explained as a segregation induced process caused by a higher solubility of the metallic impurity in the liquid Al-Si phase compared with that in solid silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357339
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  • 4
    Electronic Resource
    Electronic Resource
    Titanium gettering in silicon: Investigation by deep level transient spectroscopy and secondary ion mass spectroscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3472-3474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extrinsic gettering of titanium in float-zone silicon was investigated. After heat treatments under various atmospheres the titanium concentration was determined in the bulk by deep level transient spectroscopy and in the surface region by secondary ion mass spectroscopy. The gettering is limited by the slow diffusion coefficient and by the ability of the surface to act as a sink. We show that an oxide layer, a phosphorous glass layer, and a surface damage zone are efficient sinks. A free surface, however, shows a very limited gettering action for titanium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339292
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