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  • 1
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy studies of titanium nitride/titanium/silicon structures after thermal annealing (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 579-581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen diffusion/incorporation behaviors of TiN/Ti/Si structures after thermal annealing in nitrogen ambients have been studied by x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy measurements. At the interface between Ti and TiN, titanium dioxides, thermodynamically most stable, are formed as a consequence of grain boundary diffusion, while inside TiN layer the contents of TiO and Ti2O3 compounds increases as the annealing temperature increases. At the interface between Ti and Si, titanium silicide formation is observed in the samples annealed above 450 °C consuming a part of pure Ti layer. One thing to note is that a severe blistering is observed in a sample annealed at 600 °C, probably caused by the difference of thermal expansion coefficients between TiSi2 and TiO2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108861
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  • 2
    Electronic Resource
    Electronic Resource
    Low temperature processed 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2126-2128 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of solid-solution material 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 (0.7SBT–0.3BTT) were fabricated on n+-polycrystalline (n+-poly) Si substrates by a metalorganic solution deposition technique at a low processing temperature of 650 °C using a Pt–Rh/Pt–Rh–Ox electrode-barrier structure. The Pt–Rh/Pt–Rh–Ox structure was deposited using an in situ reactive radio frequency sputtering process. The electrodes had a smooth and fine-grained microstructure and were excellent diffusion barriers between the 0.7SBT–0.3BTT thin film and Si substrate. The ferroelectric (0.7SBT–0.3BTT) test capacitors using these electrode-barrier grown directly on Si showed good ferroelectric hysteresis properties, measured through n+-poly Si substrate, with 2Pr and Ec values of 11.5 μC/cm2 and 80 kV/cm, respectively, at an applied electric field of 200 kV/cm. The films exhibited good fatigue characteristics (〈10% decay) under bipolar stressing up to 1011 switching cycles and the leakage current density was lower 10−7 A/cm2 at an applied electric field of 200 kV/cm. The good ferroelectric properties of 0.7SBT–0.3BTT solid-solution thin films at a low processing temperature of 650 °C and excellent electrode-diffusion barrier properties of a Pt–Rh/Pt–Rh–Ox structure are encouraging for the realization of high-density nonvolatile ferroelectric random access memories on silicon substrates. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124938
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  • 3
    Electronic Resource
    Electronic Resource
    Measuring electron transfer in real space in biased asymmetric double quantum wells using far-infrared cyclotron resonance (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 214-216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of electron transfer in real space in GaAs/AlxGa1−xAs asymmetric double quantum wells under an electric field by far-infrared cyclotron resonance (CR). Due to nonparabolicity, the asymmetric quantum structure results in well-resolved CR lines, which allow contactless measurements of the electron density in each well. Our results show that electrons tunnel through the barrier from one well to the other at the level anticrossing of their ground states. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118361
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  • 4
    Electronic Resource
    Electronic Resource
    Thin films of layered-structure (1−x)SrBi2Ta2O9−xBi3Ti(Ta1−yNby)O9 solid solution for ferroelectric random access memory devices (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1041-1043 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the thin films of solid–solution material (1−x)SrBi2Ta2O9−xBi3Ti(Ta1−yNby)O9 fabricated by a modified metalorganic solution deposition technique for ferroelectric random access memory devices. Using the modified technique, it was possible to obtain the pyrochlore free crystalline thin films at an annealing temperature as low as 600 °C. The solid–solution of layered perovskite materials helped us to significantly improve the ferroelectric properties, higher Pr and higher Tc, compared to SrBi2Ta2O9; a leading candidate material for memory applications. For example, the films with 0.7 SrBi2Ta2O9–0.3Bi3TiTaO9 composition and annealed in the temperature range 650–750 °C exhibited 2Pr and Ec values in the range 12.4–27.8 μC/cm2 and 68–80 kV/cm, respectively. The leakage current density was lower than 10−8 A/cm2 at an applied electric field of 200 kV/cm. The films exhibited good fatigue characteristics under bipolar stressing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119721
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  • 5
    Electronic Resource
    Electronic Resource
    Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1080-1082 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline SrBi2Ta2O9 thin films having a layered-perovskite structure were fabricated by a modified metalorganic solution deposition technique using room temperature processed alkoxidecarboxylate precursor solution. It was possible to obtain a complete perovskite phase at an annealing temperature of 650 °C and no pyrochlore phase was observed even up to 600 °C. In addition, the SrBi2Ta2O9 thin films annealed at 750 °C exhibited better structural, dielectric, and ferroelectric properties than those reported by previous techniques. The effects of postdeposition annealing on the structural, dielectric, and ferroelectric properties were analyzed. The electrical measurements were conducted on Pt/SrBi2Ta2O9/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 330 and 0.023 and the remanent polarization and the coercive field were 8.6 μC/cm2 and 23 kV/cm, respectively, for 0.25-μm-thick films annealed at 750 °C. The leakage current density was lower than 10−8 A/cm2 at an applied electric field of 150 kV/cm. The films showed good switching endurance under bipolar stressing at least up to 1010 switching cycles. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118485
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