Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
63 (1988), S. 2104-2109
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new diffusion technique in InP using a Zn3P2 layer as the diffusion source with rapid thermal annealing is evaluated, and a number of interesting features are discussed. A p+ layer can only be achieved at temperatures ranging between 500 and 550 °C with a 15-s minimum diffusion time. Diffusivity is calculated and it is comparable with that of furnace diffusion. However, in order to form a shallow layer, there should not be any high temperature treatment or any other cause for the redistribution of Fe or dopant. Annealing at 850 °C for 15 s prior to diffusion moves the carrier profile from 3000 to 6000 A(ring) deep, and the second diffusion front extends to 2.4 μm for the semi-insulating InP substrate. Similar results are obtained on MOCVD grown semi-insulating Fe:InP epiwafer. Diffusion performed on samples without preannealing resulted in two diffusion fronts and a 2.8-μm deep second diffusion front is observed for a diffusion performed on a preannealed epiwafer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341117
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