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  • 1
    Electronic Resource
    Electronic Resource
    Gallium K-edge x-ray absorption study on Mg-doped GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 31-33 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga K-edge x-ray absorption measurements were employed to investigate Mg-doping effects in GaN samples. Strong polarization-dependent x-ray absorption near-edge structures become less pronounced with increasing doping concentration, indicating the formation of a mixing-phase structure of cubic and hexagonal phases. Analysis of the extended x-ray absorption region of the spectra revealed doping-related defects such as vacancies, substitutions, and interstitial occupations. They were formed anisotropically in the crystal c axis direction and its perpendiculars. Disorderliness arising from phase mix and defects is believed to have lowered the Debye temperature of the doped GaN films and caused the destructive interference of the absorption fine-structure oscillation functions. These effects were taken into account for the observed large coordination number reductions in our samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337636
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 897-899 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium isoelectronic doping was found to have profound effects on electrical properties of GaN films grown by metalorganic chemical vapor deposition. When a small amount of In atoms was introduced into the epilayer, the ideality factor of n-GaN Schottky diode was improved from 1.20 to 1.06, and its calculated saturation current could be reduced by 2 orders of magnitude as compared to that of the undoped sample. Moreover, it is interesting to note that In isodoping can effectively suppress the formation of deep levels at 0.149 and 0.601 eV below the conduction band, with the 0.149 eV trap concentration even reduced to an undetected level. Our result indicates that the isoelectronic In-doping technique is a viable way to improve the GaN film quality. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125622
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3349-3351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the recombination of exciton bound to isoelectronic P-hole traps. From the Arrhenius plot, the hole binding energy of ∼180 meV and the exciton localization energy of 28 meV were obtained. According to first-principle total-energy calculations, the implantation process likely introduced NI and P-related defects. By using photoluminescence excitation technique, we found that the P-implantation-induced localized states not only increase the yellow luminescence but also suppress the transitions from the free carriers to deep levels. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1476400
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