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  • 1
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    Interface-state capture cross section—Why does it vary so much? (2015)
    American Institute of Physics (AIP)
    Details
    Publikationsdatum: 2015-04-22
    Beschreibung: A capture cross section value is often assigned to Si–SiO 2 interface defects. Using a kinetic variation of the charge pumping technique and transition state theory, we show that the value of capture cross section is extremely sensitive to the measurement approach and does not provide any meaningful insight into the physics involved. We argue that capture cross section is neither a physical property of interface defects nor is there any need to assign capture cross section values.
    Print ISSN: 0003-6951
    Digitale ISSN: 1077-3118
    Thema: Physik
    Publiziert von American Institute of Physics (AIP)
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  • 2
    Digitale Medien
    Digitale Medien
    Operation and design of metal-oxide tunnel transistors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5021-5031 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The current–voltage (I–V) characteristics in the ballistic limit of metal-oxide tunnel transistors are calculated as a function of temperature, potential barrier height, gate insulator thickness, aspect ratio, and oxide-channel shape. The saturation (‘knee') point and three modes of current transport across the device are discussed. For a given aspect ratio, the output impedance improves with increase in tunnel-oxide width, accompanied by slight decrease of gate transconductance. The net result is a significant improvement in the transistor gain. The gate transconductance improves with decrease in gate-insulator thickness, while approximately maintaining the output impedance. The net result is also a significant improvement in the transistor gain. Thus for a given aspect ratio, further device optimization to increase the transistor gain can be carried out by either increasing the tunnel oxide width or decreasing the gate insulator thickness. In practice, one preferably does both. A numerical study of the device performance of tapered-oxide devices is undertaken. We find that uniform-oxide channel design is generally superior to tapered-oxide channel designs. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368749
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  • 3
    Digitale Medien
    Digitale Medien
    Light-activated two-level resistance switching: An extremely sensitive GaAs/AlGaAs solid-state photon counter (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 117-119 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on a new type of extremely quiet and sensitive GaAs/AlGaAs photodetector. The photoresponse of the device is controlled by a hole trap in a tunnel barrier. Capture of a single photoinjected hole by the trap gates the device and produces an easily measured current pulse which can be counted by a conventional pulse-counting apparatus. There is only one detectable trap in a photoactive area of (approximately-equal-to)400 μm2. However, due to electric field channeling effects the trap collects photoinjected holes with a 1% efficiency in the active region. The absence of measurable dark counts in a 25 h period at 77 K establishes a minimum detectable photon flux 〈0.001 photons/s at 8200 A(ring).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103195
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  • 4
    Digitale Medien
    Digitale Medien
    Dependence of gate control on the aspect ratio in metal/metal-oxide/metal tunnel transistors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1133-1139 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The design criteria for large transconductance/high output impedance or high-gain operation of metal-oxide tunneling transistors is given. The dependence of the gate control on the aspect ratio of thickness to width of the tunneling oxide is investigated by computer simulation. This device structure can only operate similar to conventional semiconductor transistors for aspect ratio considerably less than one. It ceases to function as a transistor for larger aspect ratio due to insufficient penetration of the gate control field into the tunneling oxide. To demonstrate this, the current–voltage characteristics are computed for aspect ratios equal to 7/30, 1, 21/10, and the different tunneling-current behaviors compared with our experimental results on Ti/TiOx/Ti and Nb/NbOx/Nb tunnel transistors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368114
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  • 5
    Digitale Medien
    Digitale Medien
    Efficient light emission by impact ionization in single-barrier tunneling devices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2124-2126 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Efficient band-gap electroluminescence has been observed in n+-n−-n+ single-barrier tunneling devices. The electroluminescence arises from holes created by the impact ionization of electrons in large electric fields. From the voltage dependence of the electroluminescence the electric field dependence of the impact ionization rate is determined. Comparisons to theory are made.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101147
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  • 6
    Digitale Medien
    Digitale Medien
    Geometrical field effects in voltage pulse fabrication of nanostructures using scanning tunneling microscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1378-1382 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Voltage pulsed modification of surfaces in air with a scanning tunneling microscope has been studied with a view to understanding the physical processes involved. Incremented negative pulses have been applied to a tungsten tip to determine the threshold for feature writing on gold. The primary event observed with virgin tips is pit formation, which is interpreted as due to the transfer of gold cations from sample to tip. Subsequent pulsing establishes a threshold for a secondary process in which hillocks form on the gold surface and which are thought to be the result of gold anion retransfer from tip to sample. The thresholds are 4.16 and 3.92 V, respectively, for the two processes. For one particular tip, which gave rise to a Y-shaped pit, a three-dimensional profile was subsequently obtained by crashing it at a remote site on the surface and imaging the crater formed. The geometrical parameters of the tip, so elaborated, allowed a model of the electrostatic potential between tip and sample during pulsing to be numerically evaluated by solution of Laplace's equation and the field pattern over the surface to be determined. For the blunt pyramid involved, there is substantial anisotropy though modest field reduction at positions some nm from the projection of the tip on the surface. It is then a straightforward matter to understand the Y shape of the pit formed on the surface by the initial pulse. Field evaporation is thereby confirmed as the operative process. Reference experiments using gold tips showed no threshold difference between primary and secondary modification, a result consistent with the field evaporation mechanism. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368171
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  • 7
    Digitale Medien
    Digitale Medien
    Fabrication of nanometer-scale side-gated silicon field effect transistors with an atomic force microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1388-1390 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The fabrication of nanometer-scale side-gated silicon field effect transistors using an atomic force microscope is reported. The probe tip was used to define nanometer-scale source, gate, and drain patterns by the local anodic oxidation of a passivated silicon (100) surface. These thin oxide patterns were used as etch masks for selective etching of the silicon to form the finished devices. Devices with critical features as small as 30 nm have been fabricated with this technique. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113210
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  • 8
    Digitale Medien
    Digitale Medien
    Fabrication of Si nanostructures with an atomic force microscope (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1932-1934 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A method for fabricating Si nanostructures with an air-operated atomic force microscope (AFM) is presented. An electrically conducting AFM tip is used to oxidize regions of size 10–30 nm of a H-passivated Si (100) surface at write speeds up to 1 mm/s. This oxide serves as an effective mask for pattern transfer into the substrate by selective liquid etching. The initial oxide growth rate depends exponentially on the applied voltage which produces an effective "tip sharpening'' that allows small features to be produced by a relatively large diameter tip.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111746
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  • 9
    Digitale Medien
    Digitale Medien
    Si nanostructures fabricated by anodic oxidation with an atomic force microscope and etching with an electron cyclotron resonance source (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1729-1731 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nanometer-scale Si structures have been fabricated by anodic oxidation with an atomic force microscope (AFM) and dry etching using an electron cyclotron resonance (ECR) source. The AFM is used to anodically oxidize a thin surface layer on a H-passivated (100) Si surface. This oxide is used as a mask for etching in a Cl2 plasma generated by the ECR source. An etch selectivity (approximately-greater-than)20 was obtained by adding 20% O2 to the Cl2 plasma. The AFM-defined mask withstands a 70 nm deep etch, and linewidths∼10 nm have been obtained with a 30 nm etch depth. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113348
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  • 10
    Digitale Medien
    Digitale Medien
    Fabrication of GaAs nanostructures with a scanning tunneling microscope (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3488-3490 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A method for fabricating GaAs nanostructures with a scanning tunneling microscope (STM) is presented. Utilizing a previously developed Si STM fabrication technique, the STM is used to pattern a thin (5 nm) epitaxial Si layer which is grown on GaAs. The patterned Si layer is used as a mask for wet etching the GaAs. This fabrication technique is quite general and should extend to other material systems provided a surface epitaxial Si layer can be grown.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110129
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