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  • American Institute of Physics (AIP)  (6)
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Publisher
Years
  • 1
    Electronic Resource
    Electronic Resource
    Current response in semiconductor heterostructures within the independent-electron picture (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2297-2302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The principle of maximum entropy is used to construct carrier distribution functions for dc transport simulations of tunneling structures within the independent particle picture. The external circuit is introduced via macroscopic constraints which are implemented into the density operator by the principle of maximum entropy. Application to (resonant) tunneling structures is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351129
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  • 2
    Electronic Resource
    Electronic Resource
    Scattering theory for mesoscopic quantum systems with non-trivial spatial asymptotics in one dimension (1995)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 36 (1995), S. 1707-1740 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Basic results which are needed for the formulation of a quantitative theory of charge transport in mesoscopic quantum-interference devices are derived. In particular, orthogonality and proper normalization of scattering states for one-dimensional quantum systems with nonzero and periodic potential asymptotics are discussed. Properties of the S-matrix are investigated. Results are obtained within the framework of ordinary linear differential equations by investigation of the spectral resolution of the identity and, alternatively, directly from asymptotic properties of Jost solutions and the theory of generalized functions. Based on the S-matrix and properties of the scattering states, an independent-particle model for the current response of mesoscopic (quasi-) one-dimensional electronic devices may be formulated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.531361
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  • 3
    Electronic Resource
    Electronic Resource
    Open boundary conditions for a time-dependent analysis of the resonant tunneling structure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1148-1150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exact boundary conditions for open quantum devices with constant potential asymptotics are presented and implemented into a numerical treatment of the one-dimensional time-dependent Schrödinger equation. A time-dependent analysis of the resonant tunneling double-barrier (RTDB) structure demonstrates their superiority over previous approaches. Our self-consistent study reveals microscopic details of the transient current in the system under an external time-dependent bias. Two time regimes characterize the charge transport in a RTDB in response to an applied bias. The ultrafast response of the system occurs in the contact regions within approximately 100 fs. This response time is of the order of the inverse bulk plasma frequency and is essentially independent of the applied bias. The second time regime is characterized by current oscillations which sensitively depend on the applied bias and structural parameters. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117087
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  • 4
    Electronic Resource
    Electronic Resource
    Infrared light emission from semiconductor double wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2553-2555 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microscopic theoretical analysis of coherent charge oscillations in optically excited GaAs- AlxGa1−xAs double wells and resulting infrared light emission is presented. Our non-phenomenological study is based on generalized Boltzmann–Bloch equations which account for the laser field within the rotating-wave approximation, the dynamics of interacting electron-hole pairs in the heterostructure, excitonic effects, and the destruction of phase coherence by the inter-carrier Coulomb interaction. Emitted THz electromagnetic pulses are analyzed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116181
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  • 5
    Electronic Resource
    Electronic Resource
    Manipulation of final state population in semiconductor heterostructures by pulsed laser fields (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 395-397 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Proper combination of pulsed laser fields allows optical control of electron inter(sub)band transitions in semiconductors leading to control of final state population. Based on a microscopic theory, we show that the final ratio of direct versus indirect excitons generated by a subpicosecond pump pulse in semiconductor double wells can be manipulated by simultaneous application of a resonant microwave pulse. Generalization and relevance of this result to other inter– and intersubband transitions is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119548
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  • 6
    Electronic Resource
    Electronic Resource
    Self-consistent model of transport in quantum well tunneling structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2458-2466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a fully self-consistent model for the current-voltage characteristic of quantum well tunneling structures. Our approach is based on the independent particle approximation and incorporates both screening of the carrier potential and the response from the contacts. It is shown that a self-consistent treatment of charge supply from the contacts is essential for meaningful description of the system far from equilibrium. Results are presented for GaAs-AlGaAs double-barrier structures. Compared to standard calculations, this approach leads to strong quantitative changes in the I-V characteristic. In particular, peak and valley currents increase and current peaks shift to higher voltages. Doping effects on the I-V characteristic are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344257
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