Publication Date:
2016-04-14
Description:
Interface properties of heavily Al-doped 4H-SiC ( 0001 ) (Si-face), ( 11 2 ¯ 0 ) (a-face), and ( 1 1 ¯ 00 ) (m-face) metal-oxide-semiconductor (MOS) structures were characterized from the low-temperature gate characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs). From low-temperature subthreshold slopes, interface state density ( D it ) at very shallow energy levels ( E T ) near the conduction band edge ( E c ) was evaluated. We discovered that the D it near E c ( E c − 0.01 eV
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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