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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 445-447 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally stimulated resonant current peaks are observed in Al0.4Ga0.6As/GaAs triple barrier diodes. These current peaks are interpreted as resonant tunnelings from the first excited electron subband in the first well to the first excited subband and to the second excited subband in the second well. The activation energies for these resonance peaks are measured. The results imply that in the substrate-side well there is a large amount of excess electrons to compensate the positive charge of silicon atoms segregated into the structure during the growth.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1025-1027 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 4×1 (respectively 1×1) (001) GaN surfaces obtained when molecular-beam-epitaxy (MBE) growth is carried out on (001) cubic SiC were exposed to an As background pressure in the MBE chamber: The reconstructions rapidly and irreversibly changed to 2×2 [respectively c(2×2)] as usually observed for GaN growth on (001) GaAs. The usual reversible 2×2/c(2×2) transitions were consequently observed when bringing the Ga flux up or down. The respective positions for the 4×1/1×1 and 2×2/c(2×2) transitions were worked out as a function of the growth parameters. These observations indicate that the 2×2 and c(2×2) GaN surface reconstructions are mediated by As atoms which we tentatively assign to a surfactant effect. A simple structural model involving As dimers is proposed that accounts for Ga coverages of 0.5 and 1 monolayer for the 2×2 and c(2×2) growth regimes, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 49-53 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large gain and a wide tunability have been achieved over the Ce3+ (5d-4f) transition in a LiYF4 crystal. A gain coefficient in excess of 180 cm−1 and a superradiant beam of 2.5 mrad divergence are observed at the laser transition, 325.2 nm, when the crystal is optically excited either at 193 or at 248 nm. Gain measurements indicate that the laser is tunable over a wavelength range of more than 10 nm.
    Type of Medium: Electronic Resource
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  • 4
    Publication Date: 2016-09-02
    Description: If small angle X-ray scattering (SAXS) utilizing the soft X-ray region is available, advanced and unique experiments, which differ from traditional SAXS methods, can be realized. For example, grazing-incidence small angle X-ray scattering (GISAXS) using hard X-ray is a powerful tool for understanding the nanostructure in both vertical and lateral directions of thin films, while GISAXS utilizing the tender X-ray region (SX-GISAXS) enables depth-resolved analysis as well as a standard GISAXS analysis in thin films. Thus, at BL-15A2 at the Photon Factory, a dedicated diffractometer for SX-GISAXS (above 2.1 keV) was constructed. This diffractometer is composed of four vacuum chambers and can be converted into the vacuum state from the sample chamber in front of the detector surface. Diffractions are clearly observed until 12th peak when measuring collagen by SAXS with an X-ray energy of 2.40 keV and a camera length of 825 mm. Additionally, we conducted the model experiment using SX-GISAXS with an X-ray energy of 2.40 keV to confirm that a poly(methyl methacrylate)-poly( n -butyl acrylate) block copolymer thin film has a microphase-separated structure in the thin film, which is composed of lamellae aligned both parallel and perpendicular to the substrate surface. Similarly, in a polystyrene-poly(methyl methacrylate) block copolymer thin film, SX-GISAXS with 3.60 keV and 5.73 keV revealed that hexagonally packed cylinders are aligned parallel to the substrate surface. The incident angle dependence of the first order peak position of the q z direction obtained from experiments at various incident X-ray energies agrees very well with the theoretical one calculated from the distorted wave Born approximation.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 5
    Publication Date: 2016-11-01
    Description: The magnetic structure and the effect of a magnetic field on its domain structure were investigated in a magnetoelectric Y-type hexaferrite, Ba 1.3 Sr 0.7 CoZnFe 11 AlO 22 , by means of mapping with a micro-focused and circularly polarized X-ray beam in the resonant X-ray diffraction. It was revealed that this hexaferrite exhibits a magnetic order characterized by two distinct antiferromagnetic components: incommensurate helical and commensurate collinear ones, which can be explained as the development of the so-called alternating longitudinal conical structure. A multi-domain state due to the handedness of the helical component, i.e., spin-chirality, is transformed into nearly a mono-domain one by using only a magnetic field. Furthermore, the sign of the spin-chirality in the mono-domain state is reversed by reversing the sign of a magnetic field. These results demonstrate that the spin-chirality in this hexaferrite can be manipulated by a magnetic field alone at room temperature.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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