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  • American Institute of Physics (AIP)  (2)
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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3655-3660 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The presence of a small amount of Mo was shown to have a significant effect on the C49–TiSi2 to C54–TiSi2 phase transformation in the Ti–Si reaction. The formation of the C54–TiSi2 phase was facilitated when an ultrathin layer of either Mo or α-MoSix was inserted at or close to the Ti/Si interface. Mo deposited on the surface of Ti had no beneficial effect on the Ti–silicide reaction; neither did Mo implanted into preexisting C49–TiSi2 films. The optimum thickness of interfacial Mo and α-MoSix layers was found to be less than 0.3 nm. Transmission electron microscopy and diffraction investigations demonstrated that Mo did not alter the sequence of the Ti–Si reaction, as proposed in recent studies. Rather, the most obvious effect of molybdenum was a reduction of the grain size of the C49–TiSi2 phase, which could lead to an increase in the nucleation density of the desired C54–TiSi2 phase and account for the observed reduction in formation temperature. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Publikationsdatum: 2016-03-24
    Beschreibung: With increasing density of memory devices, the issue of generating soft errors by cosmic rays is becoming more and more serious. Therefore, the irradiation resistance of resistance random access memory (ReRAM) to cosmic radiation has to be elucidated for practical use. In this paper, we investigated the data retention characteristics of ReRAM against ultraviolet irradiation with a Pt/NiO/ITO structure. Soft errors were confirmed to be caused by ultraviolet irradiation in both low- and high-resistance states. An analysis of the wavelength dependence of light irradiation on data retention characteristics suggested that electronic excitation from the valence to the conduction band and to the energy level generated due to the introduction of oxygen vacancies caused the errors. Based on a statistically estimated soft error rates, the errors were suggested to be caused by the cohesion and dispersion of oxygen vacancies owing to the generation of electron-hole pairs and valence changes by the ultraviolet irradiation.
    Print ISSN: 0003-6951
    Digitale ISSN: 1077-3118
    Thema: Physik
    Standort Signatur Erwartet Verfügbarkeit
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