Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 3673-3675
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate that the conductance of a field-effect transistor (FET) gated by a layer of nanometer-sized quantum dots is sensitive to the absorption of single photons. Rather than relying upon an avalanche process, as in conventional semiconductor single-photon detectors, the gain in this device derives from the fact that the conductivity of the FET channel is very sensitive to the photoexcited charge trapped in the dots. This phenomenon may allow a type of three-terminal single-photon detector to be developed based upon FET technology. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126745
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