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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 735-737 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a bistability in the resistance of a GaAs/AlGaAs modulation doped field effect transistor in which a layer of InAs self-organized quantum dots has been grown near the electron channel. Brief optical illumination causes a large, persistent drop in the two-dimensional electron gas (2DEG) resistance which can be recovered by allowing a current to flow through the Schottky gate. We demonstrate that illumination reduces the number of electrons trapped in the quantum dots, lowering their potential and thereby enhancing the 2DEG mobility. This bistability could be the basis of an optical memory or sensitive phototransistor. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3673-3675 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the conductance of a field-effect transistor (FET) gated by a layer of nanometer-sized quantum dots is sensitive to the absorption of single photons. Rather than relying upon an avalanche process, as in conventional semiconductor single-photon detectors, the gain in this device derives from the fact that the conductivity of the FET channel is very sensitive to the photoexcited charge trapped in the dots. This phenomenon may allow a type of three-terminal single-photon detector to be developed based upon FET technology. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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