Publication Date:
2015-04-17
Description:
We investigated the effect of magnetic doping on magnetic and transport properties of Bi 2 Te 3 thin films. Cr x Bi 2−x Te 3 thin films with x = 0.03, 0.14, and 0.29 were grown epitaxially on mica substrate with low surface roughness (∼0.4 nm). It is found that Cr is an electron acceptor in Bi 2 Te 3 and increases the magnetization of Cr x Bi 2−x Te 3 . When x = 0.14 and 0.29, ferromagnetism appears in Cr x Bi 2−x Te 3 thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration. The Arrott-Noakes plot demonstrates that the critical mechanism of the ferromagnetism can be described better with 3D-Heisenberg model than with mean field model. Our work may benefit for the practical applications of magnetic topological insulators in spintronics and magnetoelectric devices.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
Permalink