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  • American Institute of Physics (AIP)  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature mixing in Cu/W superlattices irradiated with light and heavy ions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2786-2793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion irradiation effects, induced at low temperature in Cu/W superlattices prepared by ion sputtering, were studied and compared using in situ resistivity measurements and x-ray diffraction. The influence of the particle mass was particularly investigated in order to measure the role of spike effects in this immiscible system. It is shown that a more important mixing can be obtained with light-ion irradiation. Nevertheless, the contribution of "thermally'' activated jumps opposing ballistic effects is significant even when small and weakly energetic cascades are formed. A dependence of the microstructural state and of the compositional substructure on the irradiating particle is also evidenced. Light-ion irradiation favors grain growth, restores grain texture, and preserves the composition modulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354056
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Small-angle x-ray scattering study of anodically oxidized porous silicon layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 780-784 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Small-angle x-ray scattering was used to investigate the microstructural change induced by electrochemical oxidation of porous silicon (PS) layers. It is shown that when the oxidation level increases, the size of the crystalline Si domains, which constitute the PS layer, decreases. This size reduction is correlated to the blue-shift observed in the photoluminescence spectra when the oxidation level is increased. Moreover, we found that a "fuzzy'' surface appears between pores (voids) and matter when the samples are electrochemically oxidized. This interface is found very sharp for the as-prepared and nonoxidized PS layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356454
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of photoluminescent porous Si by small-angle scattering of x rays (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2625-2627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microstructural study of high-porosity porous silicon layers formed on lightly P-doped wafers has been performed by x-ray small-angle scattering (SAXS) using the powerful and parallel beam of the synchrotron radiation. When the porosity of the sample is increased from 55% to 85% there is a continuous modification in the shape of the scattering profiles. The silicon skeleton mass fractal dimension decreases continuously. For porosity around 85%, the value for which the sample starts to display a strong photoluminescence at room temperature, there is a large increase in the pore size. The scattering profiles are characteristic of an isotropic three-dimensional structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106901
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the residual stress tensor in Cu/W multilayers by x-ray diffraction (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 246-248 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A direct determination of the residual stress tensor in Cu/W multilayers has been performed by x-ray diffraction using the "sin2 ψ'' method. In tungsten sublayers, we found a compressive and isotropic stress in the plane parallel to the multilayer surface of a very high value equal to −6.4 GPa. Furthermore, using stress-strain relations, the tungsten lattice structure resulting from strains is calculated: the strained W bcc structure is found to be similar to a monoclinic-like structure leading to important modifications of the diffraction pattern.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108979
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray small-angle scattering analysis of porous silicon layers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 625-628 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A small-angle x-ray scattering study of porous layers prepared on lightly doped and heavily doped silicon wafers reveals strong differences according to the dopant type. The p-type silicon layers show a roughness between matter and voids below a space-correlation length of about 10 nm and a fractal dimension of aggregates for a length scale higher than 25 nm. The lightly doped n-type is different: the scattering curve obeys the Porod law according to the rod-like structure of the pores. However, the structure of the heavily doped p+ sample is more complicated and not yet well understood.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343528
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