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  • American Institute of Physics (AIP)  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6183-6188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Er-related luminescence near 1.54 μm (∼805 meV) is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green and red luminescences are observed in implanted samples. The dependence of luminescence on the excitation energy as well as the influence of different nominal fluence and annealing conditions is discussed. Combining the results obtained from photoluminescence and Rutherford backscattering spectrometry, different lattice sites for the optical active Er-related centers are identified. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1369404
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  • 2
    Electronic Resource
    Electronic Resource
    Distribution of 1.68 eV emission from diamond films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2207-2211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free-standing polycrystalline chemical vapor deposition diamond films grown on a silicon wafer, with electrical behavior similar to values currently mentioned in the literature, present microheterogeneity. A detailed analysis by micro Raman shows how the diamond and nondiamond phases are distributed within the film and also the distribution of the silicon related luminescence. This luminescence is discussed in terms of two emitting centers close in energy. Absolute intensity of the diamond peak is not correlated with the good quality of the film as assessed by the Raman linewidth and ratio of this line to the nondiamond Raman lines. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368284
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