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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Cross-sectional transmission electron microscopic study of Au/GaP and Au/InP contacts (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 332-336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Au(80 nm)/GaP(111) samples were heat treated in forming gas in the temperature range of 450–550 °C. Very thin elongated α-Au(Ga) grains were grown into the GaP at 475 °C as a result of the interface reaction between Au and GaP. A surface (interface) energy driven grain growth in Au-Ga solid solution was observed after annealing at 500 °C. At 525 °C long, flat grains were formed from the thin elongated ones of α-Au(Ga). At 550 °C the metallization melted due to its high Ga content. During the solidification the shape of drops was preserved, and the metallization consisted of Au2Ga and Au7Ga2 grains. Au(100 nm)/InP(111) samples were annealed at 375 and 400 °C in forming gas for 10 min. Elongated crystals grown into the InP substrate due to the interaction between gold and InP were observed. Au9In4 grains are situated in these pits in the matrix of the Au2P3 monoclinic phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350277
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  • 2
    Electronic Resource
    Electronic Resource
    Theoretical explanation of the control of the Schottky barrier height using an ultrathin interface metal layer (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1652-1654 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently experimental results for a thin interface metal layer to control the Schottky barrier height of Ti/Pt/n-GaAs and Pt/Ti/n-GaAs contacts were presented [X. Wu, M. T. Schmidt, and E. S. Yang, Appl. Phys. Lett. 54, 268 (1989)]. In the present letter a possible explanation of the variation of the Schottky barrier height of the bi-metal-semiconductor contact is presented on the basis of the modification of the theory of the single-layer metal-semiconductor contact for the multilayer metal-semiconductor contact. This model leads to an acceptable agreement between our theoretical results and the experimental results presented in the above-mentioned paper and in an earlier publication [M. Hagio, H. Tagaki, A. Nagashima, and G. Kano, Solid-State Electron. 22, 347 (1979)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103131
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