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  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering study of surface barriers in GaAs passivated in alcoholic sulfide solutions (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2640-2642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been used to study the variation of surface barriers in GaAs due to sulfur passivation in solutions of ammonium sulfide [(NH4)2S] in different alcohols (ethanol, isopropanol, and tert-butanol). It has been found that the surface barrier height and the depletion layer width decrease considerably with the decrease of the dielectric constant of the passivating solution. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366079
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  • 2
    Electronic Resource
    Electronic Resource
    Valence band photoemission, band bending, and ionization energy of GaAs(100) treated in alcoholic sulfide solution (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 289-294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Valence band and Fermi level position on a p-GaAs(100) surface treated in the solution of ammonium sulfide in isopropanol have been studied by ultraviolet photoemission spectroscopy. Sulfur treatment and subsequent annealing affect features of 0.8 and 3.7 eV binding energy in normal emission valence band spectrum of a bare semiconductor and the effect is related to the variation of surface chemical bonds. It has been found that after sulfur treatment surface band bending and ionization energy increase by 0.4 and 0.3 eV, respectively. Annealing at 310 °C or higher results in the decrease of the ionization energy with the temperature. The position of the surface Fermi level sharply changes from 1.5–1.20 to 0.85 eV above the valence band maximum when the surface is annealed at 360 °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371858
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