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  • American Institute of Physics (AIP)  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Sapphire filter thickness optimization in neutron scattering instruments (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 70-73 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The present work is concerned with the optimization of the sapphire fast neutron filter thickness used in neutron diffraction instruments. The optimization is based on maximization of the slow neutron transmission, minimization of the fast neutron transmission, and also taking into consideration the neutron background at the vicinity of an instrument. Scattering properties of the sapphire in the fast and slow neutron regions are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150163
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  • 2
    Electronic Resource
    Electronic Resource
    Study of the spin glass transition of amorphous FeZr alloys using small angle neutron scattering : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6380-6382 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SANS experiments of an amorphous Fe90Zr10 alloy were carried out in the temperature region 20–300 K with and without the application of a magnetic field. The scattering versus temperature for different Q values (zero field cooled magnetization) shows two transitions at Tc=240 K and Tf=40 K. However, both transitions are not observed in magnetic field (2.6 kG) cooling down curves. By switching off the magnetic field and warming up the sample only the transition at Tf=40 K is observed. Application of a magnetic field at different temperatures in a zero field cooled sample reduces the scattering; the scattering returns to its initial value after switching off the field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358273
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  • 3
    Electronic Resource
    Electronic Resource
    Distribution of SiO2 precipitates in large, oxygen rich Czochralski-grown silicon single crystals after annealing at 750 °C (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 553-562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defects due to oxygen precipitation in Czochralski grown silicon single crystals annealed for 216 h at 750 °C and with oxygen concentration varying between 18 and 12×1017 atoms per cm3 (according to DIN 50438) were studied by means of small angle neutron scattering and γ-ray diffractometry probing the same volume elements in the sample. The size and the shape of the SiO2 precipitates were determined by means of small angle neutron scattering. In the center of the disk-shaped sample of 10 cm diameter one finds spherical precipitates with a radius of ≈20 A(ring), at the border the precipitates are of plate-like shape, ≈146×146×41 A(ring) in dimension. The k-space distribution of the diffuse scattering caused by the strain field of the SiO2 precipitates has been determined by means of a double-crystal diffractometer and 316 keV γ radiation. Modeling with Huang and Stokes–Wilson theory suggests that the relatively small SiO2 precipitates are loosely bound in larger clusters with a radius of ≈2000 A(ring) in which the crystal matrix is strongly distorted. With the γ-ray diffractometer operated in the single-crystal mode the thickness dependence of the integrated reflecting power was measured from which the static Debye–Waller factor for the 2 2 0 reflection is determined using statistical dynamical theory. The results confirm qualitatively the cluster model. In the center of the sample the size of the precipitates could be calculated by additional measurement of the static Debye–Waller factor of the 4 4 0 reflection. The result is in excellent agreement with the small angle neutron scattering data. Combining all the experimental data taken in the oxygen rich center of the annealed silicon crystal the average distance between the centers of the SiO2 precipitates in the clusters is ≈80 A(ring) and the distance between the large clusters is ≈40 000 A(ring). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359039
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