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  • 1
    Electronic Resource
    Electronic Resource
    Three-dimensional site dependence of single-ion-induced charge collection at a p-n junction—role of funneling and diffusion processes under different ion energy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3413-3418 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amount of charges induced by high energy single ion irradiation at a p-n junction diode has been measured and its dependence on the ion incident position has been evaluated by using single-ion microprobe technique. By irradiating single He ions with various incident energy (1.4–4.05 MeV), dependence of the profiles of collected charges on the ion incident energy has been investigated. Origins of the different profiles among the different incident energy are discussed in terms of different contribution of two mechanisms of charge collection, namely, field funneling and diffusion of carriers. In the case of the ion incidence within the junction area, dependence of the charge collection profile on the ion incident energy comes from different contribution of the funneling in the charge collection process, while difference in the collection efficiency of the diffused charges affects the profile in the case of the ion incidence at outside of the junction. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367138
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  • 2
    Electronic Resource
    Electronic Resource
    Quantitative characterization of ion-induced SiO2/Si interface traps by means of MeV He single-ion irradiation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7814-7818 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependencies of MeV He single-ion-induced interface traps on oxide thickness and oxide electric fields Eox during irradiation was investigated quantitatively with a single-ion microprobe. Under a negative electric field, the number of interface traps induced by a single ion becomes constant at about 0.1 regardless of both the oxide thickness and oxide electric field. Under a positive electric field, the generation rate of interface traps per ion for thicker oxide metal–oxide–semiconductor field-effect transistors (MOSFETs) is greater than that for thinner oxide MOSFETs. We also found that the generation rates increase with dependence on the oxide electric field of Eox0.2, regardless of the oxide thicknesses. The field dependence of interface traps under a positive electric field was found to be very similar to that of oxide trapped holes. The causes of this dependence are discussed comprehensibly. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370590
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