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  • American Institute of Physics (AIP)  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3621-3623 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed KrF laser annealing can suppress the island structure formation and Ge segregation associated with the interfacial reactions of Ni/Si0.76Ge0.24. For the Ni/Si0.76Ge0.24 films annealed at an energy density of 0.1–0.3 J/cm2 nickel germanosilicide associated with the amorphous overlayer was formed, while at energy densities above 0.4 J/cm2 cellular structures of Ge-deficient Si1−xGex islands surrounded by Ni(Si1−xGex)2 due to the constitutional supercooling occurred. For the continuous Ni(Si1−xGex) films grown at 200 °C, subsequent laser annealing at a higher energy density of 0.6–1.0 J/cm2 caused transformation into homogeneous Ni(Si0.76Ge0.24)2 films without island structure and Ge deficiency which readily appeared on furnace annealing at temperatures above 400 °C. At energy densities above 1.6 J/cm2 the same cellular structures as described above were also noted. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365683
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  • 2
    Electronic Resource
    Electronic Resource
    Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1355-1357 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reactions of Pd/Si0.76Ge0.24 were studied by pulsed KrF laser annealing as a function of energy density and pulse number. At an energy density of 0.1–0.4 J/cm2, a continuous germanosilicide layer composed of a low-temperature phase, Pd2(Si1−xGex), and a high-temperature phase, Pd(Si1−xGex), was formed. In contrast to vacuum annealing, Ge segregation out of the germanosilicide layer and the strain relaxation of the residual Si0.76Ge0.24 film could be effectively suppressed by pulsed KrF laser annealing at 0.1 J/cm2. Multiple pulse annealing at 0.1 J/cm2 could further homogenize the Pd concentration of the germanosilicide layer and promote the growth of Pd(Si1−xGex). Concurrently, the smoothness of the germanosilicide layer was substantially improved in comparison with those grown by vacuum annealing at temperatures above 200 °C. The studies also revealed that for multiple pulse annealing at 0.1 J/cm2 with a low repetition rate, 1 Hz, the evolution of phase formation and Pd diffusion could be proceeded by each individual laser pulse. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122161
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  • 3
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of hexagonal and cubic SiC films on Si by vacuum annealing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 916-918 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized epitaxial growth of hexagonal (6H) and cubic (3C) SiC films on Si by annealing the Si substrates at 700–850 °C in a vacuum of 1–2×10−6 Torr is presented. The orientation relationships of epitaxial SiC films grown on (111)Si and (100)Si were (0001)6H-SiC//(111)Si and [112¯0]6H-SiC//[011¯]Si, (111)3C-SiC//(111)Si and [1¯10]3C-SiC//[1¯10]Si, and (100)3C-SiC//(100)Si and [011]3C-SiC//[011]Si, respectively. The amount of 6H-SiC epitaxy was less than that of 3C-SiC epitaxy. For the films grown at 750–850 °C for 0.5 h, the area fraction of SiC epitaxy ranged from 60% to 80% and the film thickness ranged from 0.02 to 0.15 μm. The main carbon source for the growth of SiC on Si during vacuum annealing was the carbon-containing residue present at the chamber walls. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116942
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of Mo-free C40 Ti(Si1−xGex)2 precursors and the thickness of an interposed Mo layer on the enhanced formation of C54 Ti(Si1−xGex)2 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3482-3484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Mo-free C40 Ti(Si1−xGex)2 precursors and the thickness of an interposed Mo layer between Ti films and Si0.76Ge0.24 substrates on the lowering of formation temperature of C54 Ti(Si1−xGex)2 were studied. Metastable C40 Ti(Si1−xGex)2 precursors were grown by pulsed KrF laser annealing. Upon rapid thermal annealing, the Mo-free C40 phase could not be directly transformed to the C54 phase without going through the C49 phase. When the thickness of the interposed Mo layer increased, up to 2.5 nm, the temperature at which the C54 phase was initially formed changed from 750 to 600 and then to 650 °C. The present result showed that with increasing Mo concentration in the reacted layer, the phase stability shifted from C54 to C40 and no C49 was observed. It seems that apart from the C40 template mechanism, the electron/atom ratio also plays an important role in the enhanced formation of the C54 phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125362
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