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  • American Institute of Physics (AIP)  (6)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5365-5370 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Signal-to-noise ratio (SNR) from a limited bit sequence has been extracted from magnetic force microscopy (MFM) images by two different methods and compared. The autocorrelation SNR properties extracted from the MFM image data are in better agreement with spinstand data than "normal" Fourier extracted SNR values. Transition noise data were also extracted and analyzed, "Squeezing" of the noise was measured as the periodicity of the recorded bit pattern became smaller than 250 nm and subsequently a relaxation at ∼200 nm occurred. MFM analysis based SNR data for two media types (CoCrPtTa alloy and CoB/Pd multilayer based) are compared. Ni45Fe55 alloy was used for the soft underlayer material. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5693-5695 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Application of reflection high-energy electron diffraction (RHEED) to texture determination is demonstrated for magnetic thin film applications. Diffraction pattern analysis based on kinematic theory of RHEED is outlined. Application of the technique is demonstrated for texture characterization of hexagonal-close-packed CoCr alloys that are used as recording layers in perpendicular recording media. It is shown that both texture orientation and texture angular dispersion extracted from RHEED patterns are in agreement with the data obtained using x-ray diffraction. © 2000 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1969-1971 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results on an improved growth process for cubic boron nitride (c-BN) films. The films are deposited on a dc-biased silicon substrate using ion-assisted sputtering. First, we grow a BN template layer at a bias voltage which maximizes the sp3 content. After this template layer attains a thickness of ∼500 Å, corresponding to the coalescence of the mosaiclike grain structure, we find that we can reduce the substrate bias to about 50% of its initial value while sustaining pure phase c-BN growth. The reduction in nitrogen ion energy results in a dramatic increase in the growth rate as well as significantly improved film quality. © 1997 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 955-957 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report evidence for oriented growth of pure-phase cubic boron nitride on silicon (100) substrates. The films are deposited at high temperatures (up to 1200 °C) by reduced-bias ion-assisted sputtering. The growth technique produces highly textured c-BN films with relatively large grain size (∼1000 Å) and reduced residual stress as the bias voltage is decreased. We have been able to grow thick (up to 2 μm) cubic boron nitride films containing 100% of the cubic phase with the (001) crystallographic axis of c-BN oriented perpendicular to the surface of the film. We show how reflection high-energy electron diffraction applied to texture monitoring in polycrystalline films can be used as an in situ process control technique that allows texture identification and quantitative characterization of its angular spread. © 1999 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 353-355 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work addresses the issue of cubic phase formation in boron nitride thin-film systems. The presented data suggest strain-induced formation of cubic phase. The compliant nature of the turbostratic boron nitride buffer layer is shown to be an essential factor for cubic phase nucleation. Two distinct regimes of cubic phase formation are observed. First, a cubic boron nitride seed layer is formed on top of the turbostratic boron nitride buffer layer under nitrogen ion irradiation of the growth surface. This is followed by the growth mode of the cubic phase, which requires a different set of growth conditions. The role of nitrogen ion irradiation in two deposition regimes is discussed. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2151-2156 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A kinematic theory of reflection high energy electron diffraction (RHEED) is presented for textured polycrystalline thin films. RHEED patterns are calculated for arbitrary texture situations and for any general crystallographic orientation that may be encountered in thin-film growth. It is shown that the RHEED pattern can be used as a fast and convenient tool for in situ texture characterization. The approach also permits quantitative extraction of angular dispersion parameters which are useful for optimizing thin-film growth conditions. © 1999 American Institute of Physics.
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