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  • American Institute of Physics (AIP)  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    The reactions of Si+ ions with CH3SiH3, CH3SiD3, C2H6, and CH3CHD2 (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 2819-2824 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The reactions of Si+ with CH3SiH3, CH3SiD3, C2H6, and CH3CHD2 have been studied in a tandem mass spectrometric apparatus over the kinetic energy range of 1–10 eV laboratory-frame-of reference (LAB). In all systems, the major process is the formation of SiCH+3, as well as SiCH2D+ and SiCHD+2 in the case of the reaction with CH3CHD2. It is shown that in the reaction of Si+ with CH3SiH3 and CH3SiD3, the process is best described as a Walden inversion, while in the reaction with C2H6 and CH3CHD2, the process appears to approximate the spectator stripping model or modified spectator stripping (polarization-reflection model). In the reaction with CH3CHD2, the slight preference of Si+ to strip the CH3 radical rather than the CHD2 radical is shown to be in accord with a cross-sectional energy dependence of approximately E−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461978
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  • 2
    Electronic Resource
    Electronic Resource
    Behavior of phosphine in a focused CO2 laser beam (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2283-2292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy absorption and decomposition of PH3 in a focused CO2 laser beam exhibit a threshold nature. The effect of laser frequency, pulse energy, pressure of PH3, and the presence of a foreign gas (neon) on the energy absorption and decomposition threshold were studied. The absorption of radiation increases sharply at threshold and is always accompanied by a visible luminescence. All the experimental facts can be explained in terms of an electron avalanche process, driven by inverse bremsstrahlung absorption of energy from the field of a focused IR laser beam. The simplified phenomenological theory of the dielectric breakdown of gases was applied to the explanation of the threshold phenomena. The decomposition of phosphine was studied as a function of laser frequency, pressure of PH3, and in the presence of foreign gases. The only products of the decomposition found were H2 in the gas phase and a solid deposit PHx. The partition of hydrogen between the gas and solid phases depends on the experimental conditions. A reaction scheme is presented which accounts satisfactorily for the experimental facts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337024
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  • 3
    Electronic Resource
    Electronic Resource
    The photoionization spectra of effusive and supersonic molecular beams of monosilane (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 3426-3432 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Effusive and supersonic molecular beams of monosilane have been ionized by photons from the Berlin synchrotron light source (BESSY). Photoionization efficiency curves have been taken as a function of wavelength (50 to 120 nm) for a number of fragment ions. The main products observed are SiH+3 and SiH+2 . No appreciable SiH+4 could be detected and less than 5% of the signal was due to lower fragments (SiH+, Si+). The threshold energies Ethr, the standard enthalpy of formation ΔH(open circle)f,g of the fragment ions SiH+2 and SiH+3 and the ionization potentials Iz of the corresponding radicals have been determined to be SiH+2@B: Ethr=11.67±0.04 eV ΔH(open circle)f,g=276.3±0.9 kcal/mol, Iz(SiH2)=9.47±0.03 eV.SiH+3@B: Ethr=12.23±0.02 eV, ΔHf,g=237.1±0.6 kcal/mol, Iz(SiH3)=8.32±0.07 eV. Discrete structure in the photoionization curves is observed in the range of Ethr=15.8–17.6 eV and interpreted as vibrational progressions of a highly excited autoionizing state of SiH4 which lies 15.8 eV above the ground state. Vibrational constants have been found to be 1790±80 and 680±50 cm−1 which correspond to the ground state constants 2187 and 711 cm−1 of the ν1 and the ν2 modes of monosilane. The broadening of some lines in the progression is interpreted as being caused by a transition into a dissociative excited neutral state with lifetimes as short as 3×10−14 s for v=3 of the ν2 mode. Additional ions (predominantly Si2H+4, Si2H+6, Si2H+7) have been observed when photoionizing a supersonic molecular beam of monosilane. These are shown to stem from the ionization and subsequent fragmentation of dimers and possibly higher multimeres. Threshold values have been determined to be Si2H+4@B: 11.58±0.02 eV; Si2H+6@B: 11.4 eV; and Si2H+7@B: 11.4 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449147
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