ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (10)
Collection
Publisher
Years
  • 1
    Electronic Resource
    Electronic Resource
    Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1365-1367 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the origins of conductivity and low-frequency noise in GaN p-n junctions under reverse bias. Carrier hopping through defect states in the space charge region is identified as the main mechanism responsible for low bias conductivity. Threading dislocations appear the most likely source of such defect states. At higher bias hopping is supplemented with Poole–Frenkel emission. A relatively high level of 1/f-like noise is observed in the diode current. The bias and temperature dependencies of the noise current are investigated.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121056
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Low-frequency noise and performance of GaN p-n junction photodetectors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2142-2146 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on low-frequency noise characteristics of visible-blind GaN p-n junction photodetectors. Carrier hopping through defect states in the space charge region, believed to be associated with dislocations, is identified as the main mechanism responsible for the dark conductivity of the photodiodes. Under reverse bias, the dark current noise has the 1/f character and obeys the Hooge relation with α(approximate)3. Under forward bias, we observe generation-recombination noise related to a trap level with the activation energy of 0.49 eV. Under illumination, detectivity is found to be shot noise limited. The noise equivalent power of a 200×200 μm2 photodetector is estimated at 6.6×10−15 W/Hz1/2 at a bias of −3 V. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366950
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Linewidth and α-factor in AlGaAs/GaAs vertical cavity surface emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 277-279 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the α-factor, the linewidth-power product, and the differential gain in AlGaAs/GaAs vertical cavity surface emitting lasers are presented. The linewidth power product of 95 MHz mW which results in the α-factor of 3.7 is obtained. The α-factor as a ratio of the refractive index and gain derivatives with respect to the carrier density is also estimated. From the small signal modulation measurements of the resonance frequency, a differential gain of 3.7×1016 cm2 is obtained. The estimate of differential effective index is made difficult by an anomalously strong dependence of the emission wavelength on injection current. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113516
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Frequency modulation characteristics of gain-guided AlGaAs/GaAs vertical-cavity surface-emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3239-3241 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe measurements of dynamic wavelength shift in single mode vertical cavity surface emitting lasers operating at 850 nm. Small signal modulation experiments yield a linewidth enhancement factor 3.7〈α〈4.5, depending on the modulation frequency. Under large signal modulation we measure Δν×Δτ∼3.6 for gain switched pulses. The dependence of dynamic chirp on the pulse width is accurately modeled by numerical solution of rate equations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113390
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Measurement of internal quantum efficiency and losses in vertical cavity surface emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1720-1722 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new experimental technique for the measurement of intrinsic parameters of vertical cavity surface emitting lasers is suggested. Using an external cavity with variable reflectivity we measure the internal quantum efficiency of ηi=0.6 and internal losses of αi=10 cm−1 in a gain guided AlGaAs/GaAs laser operating at 850 nm. In addition, transparency current of I0∼0.46×Ith is obtained, in excellent agreement with a direct measurement. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113345
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Polarization instability and relative intensity noise in vertical-cavity surface-emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2141-2143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe a polarization instability in circularly symmetric vertical-cavity surface-emitting lasers. A relatively long time, 3–5 ns, is required to establish a dominant polarization state. Under high-speed digital modulation this leads to strong enhancement, 20–30 dB, in polarization resolved low-frequency relative intensity noise. This polarization instability is accurately described by a simple rate-equation model. A similar increase in relative intensity noise, under dc bias, is caused by energy partition between orthogonally polarized modes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114746
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Threshold carrier density in vertical cavity surface emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2031-2033 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combination of spontaneous emission lifetime and spectral measurements is used to estimate the threshold carrier density in small diameter gain guided vertical cavity surface emitting lasers. Differential spontaneous emission lifetimes measured below threshold are extrapolated to a τth=0.4 ns at threshold. The corresponding threshold carrier density is Nth=7.9×1018 cm−3. The measured carrier densities are used to calculate spontaneous emission spectra. These are in agreement with the edge emission spectra obtained on cleaved laser chips. For the measured carrier density, we estimate the threshold gain at the emission wavelength of g=1640 cm−1. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113682
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Spontaneous emission factor in oxide confined vertical-cavity lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 13-15 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on measurements of the spontaneous emission factor for oxide-confined InGaAs vertical cavity surface emitting lasers. The spontaneous emission factor is determined as a function of the active layer volume from the measurement of small-signal harmonic distortion at threshold. For a 3×3 μm oxide aperture device we obtain spontaneous emission factor of 4.2⋅10−2 at room temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119288
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Differential carrier lifetime in oxide-confined vertical cavity lasers obtained from electrical impedance measurements (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 899-901 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Differential carrier lifetime measurements were performed on index-guided oxide-confined vertical cavity surface emitting lasers operating at 980 nm. Lifetimes were extracted from laser impedance measurements at subthreshold currents, with device size as a parameter, using a simple small-signal model. The carrier lifetimes ranged from 21 ns at 9 μA, to about 1 ns at a bias close to threshold. For a 6×6 μm2 oxide aperture device the threshold carrier density was nth∼2×1018 cm−3. The effect of carrier diffusion was also considered. An ambipolar diffusion coefficient of D∼11 cm2 s−1 was obtained. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123403
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Small-signal impedance characteristics of quantum-well laser structures (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4109-4111 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Small-signal impedance characteristics of quantum-well laser structures are analyzed. A simple analytical expression for the frequency dependence of below-threshold small-signal impedance is derived and verified experimentally. It is shown that the differential carrier lifetime and quantum-well transport and capture times can be extracted from electrical impedance measurements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1382651
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...