Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 994-1000
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We analyze dark current-voltage and short-circuit current versus open-circuit voltage measurements of hydrogenated amorphous silicon pin and nip diodes. The ideality factor of ∼1.4 is independent of the thickness of the intrinsic layer, indicating that recombination occurs in the p/i interface region rather than in the bulk. These results can be simulated accurately when the defect-pool model is used. Lateral amorphous silicon diodes with a uniform defect density throughout the intrinsic region have ideality factors, which do depend on the size of the intrinsic region and exceed the theoretical value of 2. We present a model to explain the ideality factor and to verify the results with numerical simulations. Values smaller than 2 are caused by unequal shifts of the quasi-Fermi levels for electrons and holes; values larger than 2 arise when the recombination is spread out over a wide region. In that case the distance between the quasi-Fermi levels is smaller than the applied voltage. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1379560
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