ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (2)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2072-2075 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser etching of ferrites was previously done by scanning a focused continuous-wave laser beam on a ferrite sample in a chemical environment. We study the phenomenon of photo-ablation of Ni-Zn or Mn-Zn ferrites by pulsed 248-nm KrF excimer laser irradiation. A transfer lens system is used to project a grating pattern of a mask irradiated by the pulsed KrF laser onto the ferrite sample. The threshold fluence for ablation at the ferrite surface is about 0.3 J/cm2. A typical fluence of 1 J/cm2 is used. The etched grooves produced are typically 20–50 μm wide, with depths achieved as deep as 70 μm . Groove straightness is good as long as a sharp image is projected onto the sample surface. The wall angle is steeper than 60 degrees. Scanning electron microscopy of the etched area shows a "glassy'' skin with extensive microcracks and solidified droplets being ejected that is frozen in action. We found that this skin can be entirely removed by ultrasonic cleaning. A fairly efficient etching rate of about 10 nm/pulse for a patterned area of about 2 mm×2 mm is obtained at a fluence of 1 J/cm2. This study shows that projection excimer laser ablation is useful for micromachining of ferrite ceramics, and indicates that a hydrodynamic sputtering mechanism involving droplet emission is a cause of material removal.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 1557-1567 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The torsional potential energy surface (TPES) for internal rotation of the CHO group in glyoxal CHOCHO has been derived experimentally by fitting observed energies for the torsional vibration ν7 in both trans- and cis-glyoxal to those calculated with the hindered rotation formalism of Lewis, Malloy, Chao, and Laane. The experimental energies were obtained from S1 → S0 single vibronic level fluorescence (SVLF) spectra of jet-cooled glyoxal. SVLF from the trans levels 73 and 74 plus the cis levels 00 and 51 yield the torsional vibrational energies of all 7n trans levels with n≤14 (except for 713) and that of the cis level 72. The energies of odd trans 7n levels with n≥7 as well as spectroscopic values of any cis 7n level were previously unknown. The best derived TPES fits the observed trans and cis levels to within 0.4 cm−1 except for two cases where the mismatch is 1.0 cm−1. The TPES is defined by the potential energy 2V=∑6n=1Vn (1−cos nφ) where φ is the torsional angle. For the best TPES, coefficients are (in cm−1) V1=1719.4, V2=1063.5, V3=−53.2, V4=−81.9, V5=21.3 and V6=2.9. For this TPES, the energy separation between the trans and cis potential wells is 1688 cm−1, the barrier to trans → cis internal rotation is 2077 cm−1 and the barrier to cis → trans rotation is 389 cm−1. As one moves from the trans well at φ=0°, the torsional barrier occurs at 110°.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...