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  • American Institute of Physics (AIP)  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1145-1154 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various effects occur which can prevent attainment of the high Q's and/or the high gradient fields necessary for the operation of radio-frequency (rf) superconducting cavities. One of these effects, multipactor, both causes the cavity to detune during filling due to resonant secondary electron emission at the cavity walls, and lowers the quality factor (Q) by dissipative processes. TiN deposited onto the high-field regions of room-temperature Al cavities has been used at the Stanford Linear Accelerator Center to successfully reduce multipactor in the past. We have therefore studied TiN and its companion materials, NbN, NbC, and TiC, all on Nb substrates under several realistic conditions: (1) as-deposited, (2) exposed to air, and (3) electron bombarded. The studied films (up to 14-nm thickness) were sputter deposited onto sputter-cleaned Nb substrates. Results indicate that all the materials tested gave substantially the same results. The maximum secondary electron yields for as-deposited films were reduced to nearly the preoxidized values after electron bombardment (2–3×1017 electrons cm−2 in the case of NbN and NbC). X-ray photoelectron spectroscopy analysis showed that the oxides (e.g., TiO2 in the case of TiN films) formed during air exposure were slightly reduced (converted to lower oxides) by the electron-beam exposure. Auger electron spectroscopy (AES) showed a slight reduction in the surface O concentration following beam exposure. These results suggest that the chemical nature of top surface layers is responsible for the substantial changes in secondary electron yield observed upon electron-beam exposures and that AES does not reflect this change strongly because of the difficulty in extracting chemical (versus elemental) information from AES. The results indicate that any of these films would be poor choices if simply deposited and exposed to air, but, in fact, the in situ electron bombardment which occurs during cavity operation serves to reduce the secondary electron yield and thereby causes a substantial reduction in multipacting.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1400-1405 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (〈5 nm) air-oxidized Cr layers are deposited on the alumina output windows of radio-frequency klystron tubes to prevent electron multipactor by reducing the secondary electron emission yield of the alumina surface. The top several nanometers of these layers appear to be Cr2O3. To compare the measured surface properties of these layers with those of clean stoichiometric Cr2O3, quasibulk Cr2O3 layers were produced by wet-H2-firing magnetron-deposited Cr films on Cu substrates and characterized by x-ray photoelectron-, Auger electron-, and electron energy loss spectra and secondary electron emission yield measurements. Other properties measured were x-ray diffraction structure, sheet resistance, and optical reflectivity. In particular, the peak of the secondary electron yield was found to be ∼1.7, which is considerably higher than the 〈1 yield value reported earlier in the literature. The Cr2O3 Cr 2p x-ray photoelectron core level spectrum was curve-fit using Doniach–Sunjic line shapes and statistical fitting methods. It is shown that each 2p level is composed of three multiplet-split peaks 1.1 eV apart. In addition, the three 2p1/2 peaks are folded with a 2p3/2 3d satellite.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3043-3043 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measuring the valence band density of states (DOS) of Fe provides a stringent test of models of metallic ferromagnetism at finite temperatures. The density of states of Fe above the Curie temperature TC, as obtained by self-consistent calculations in the disordered local moment (DLM) picture by Oguchi et al. and Pindor et al. differs strongly from the T=0 DOS calculated by Moruzzi et al. between the Fermi energy and 2-eV binding energy, i.e., the relatively broad peak in the T=0 DOS around 1-eV binding energy is of much smaller amplitude in the T(approximately-greater-than)TC DOS. This effect should be observable by valence band XPS on Fe as a 30% decrease of intensity at about 1-eV binding energy with a typical energy resolution of about 0.8 eV. We have measured the valence band XPS of Fe(100) at room temperature and temperatures above TC. The predicted intensity decrease has not been observed.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3021-3023 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absorbed electron current for a clean Fe(100) surface as a function of energy rises steplike at the vacuum-energy cutoff with an absorption close to 1. The smooth decrease of absorbed current at higher electron energy due to secondary electron emission is superimposed by a considerable amount of fine structure, the amplitude of which decreases with increasing energy. These features are found in good agreement with the results of a calculation of the elastic part of the electron reflection coefficient. Further, they are compared with the ferromagnetic electronic bulk band structure calculated above the vacuum energy. From the comparison with the experimental data, the energy dependence of the real and imaginary parts of the inner potential is determined.
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