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  • American Institute of Physics (AIP)  (6)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 941-944 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarized Raman spectra around trenches formed on (100) silicon wafers have been measured and it has been found that the peak frequency shift varies with the polarization configuration, suggesting that anisotropic stresses occur around the trenches. The different stress components have been calculated by the use of the polarization Raman technique and it was found that the stress distribution of each component approximately agrees with that of each component simulated by a finite element method. Polarized Raman spectroscopy is a powerful technique for the estimation of an anisotropic stress of an electronic silicon device in situ. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1639-1641 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of diamondlike amorphous carbon (a-C) films prepared by the sputtering method have been measured as a function of the excitation wavelength. The Raman spectral profiles vary sensitively, reflecting the change of absorption spectra associated with π-π* electronic transitions with the hydrogen content of the films. From a comparison between Raman and electronic absorption spectra, it is confirmed that the Raman spectral variation with the excitation wavelength is due to the π-π* resonant Raman scattering from π-bonded (sp2) carbon clusters.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2608-2610 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured Raman spectra of diamond films prepared by a hot-filament method and found that diamond layers on Si substrates are under compressive strain. The degree of the strain is found to increase with increasing nondiamond component in the diamond films. It is shown that Raman spectroscopy is a powerful method to estimate the crystalline quality, especially the strain in the diamond films.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6464-6468 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of diamondlike amorphous carbon (a-C) films prepared under atmosphere with various hydrogen gas content have been measured as a function of excitation wavelength. The Raman spectral profiles vary with excitation wavelength depending on electronic absorption spectra associated with π-π* electronic transitions. Dependence of Raman spectra on excitation wavelength is interpreted in terms of π-π* resonant Raman scattering from aromatic rings with various sizes rather than polyene chains. The relative intensity of a 1400 cm−1 band against a 1530 cm−1 band is found to decrease with an increase of sp3 content in a-C films. It is shown that the relative intensity can be used as a parameter for sp3 content.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3114-3116 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of diamond powders with size less than 2 μm have been measured as a function of the particle size. The Raman line was found to become more asymmetric with some tailing towards lower Raman shifts, broader, and weaker with decreasing particle size. The observed result can be explained by a phonon confinement effect rather than by a strain effect. This work predicts that it is very difficult to detect Raman spectra of diamond particles with size less than ∼50 A(ring). A broad Raman band, whose intensity becomes stronger with decreasing particle size, was observed around 600 cm−1 in the spectra of diamond powders with particle size less than 2 μm. We hypothesize that the broad band arises from transverse acoustic phonons near the Brillouin zone boundary because of the relaxation in the wave vector selection rule.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 694-696 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured Raman spectra of diamond with nanometer size, called cluster diamond. The Raman bands assigned to sp2 and sp3 clusters have been observed at around 1600 and 1322 cm−1, respectively. This result suggests that the cluster diamond slightly contains the sp2 cluster. The Raman band assigned to sp3 cluster is found to shift by −10 cm−1, compared with that of bulk crystal and to be asymmetric with some tailing toward lower Raman frequency. The observed Raman spectrum agrees well with that calculated by a phonon confinement model. The crystallite size of the cluster diamond estimated from the phonon confinement model agrees approximately with that estimated from x-ray measurement. Raman spectroscopy gives some information about the crystallite size of diamond particles with nanometer size. © 1995 American Institute of Physics.
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