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  • American Institute of Physics (AIP)  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 896-901 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The simultaneous study of absorption, luminescence, and ODMR spectra of erbium doped a-Si:H and a SiCx:H alloy reveals that Er3+ ions are pumped by a resonant but nonradiative energy transfer from electron–hole pairs excited in the host. Direct optical pumping into absorption lines of Er3+ is not observed. The emission of the Er3+ ions is strong and decreases only moderately from 77 K to room temperature. We propose an energy transfer by a Förster mechanism, based on resonant dipole coupling, which quenches efficiently the luminescence of the host in the case of large erbium concentration. Resonance of electron–hole pairs to the excited state of the rare earth ion is achieved as electrons thermalize in tail states. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370820
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  • 2
    Electronic Resource
    Electronic Resource
    Oxygen incorporation and oxygen-induced defect formation in thin Si and Si1−xGex layers on silicon grown by chemical vapor deposition at atmospheric pressure (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7829-7834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of oxygen into thin epitaxial Si and heteroepitaxial Si1−xGex layers deposited, applying a conventional atmospheric pressure process, from silane, germane, hydrogen chloride, and hydrogen gas mixtures in a temperature range from 1070 to 720 °C is analyzed. The role of oxygen for defect formation has been shown by means of a correlation between high resolution defect analysis using transmission electron microscopy and quantitative oxygen depth profiling using Auger electron spectroscopy and secondary ion mass spectrometry. In the low-temperature region traces of residual H2O vapor lead to oxygen precipitation. These precipitates are the origin of extended lattice defects such as stacking faults and microtwins and can result in highly defective films with polycrystalline inclusions and increased surface roughness. It was found that, in order to prevent the observed defects, it is necessary to keep the oxygen concentration below 3×1019 cm−3. However, by carefully controlling the experimental parameters it is also possible to realize nearly defect-free structures with high oxygen concentrations up to 1020 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356565
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  • 3
    Electronic Resource
    Electronic Resource
    Chemically deposited epitaxial Si1−xGex thin film growth at atmospheric pressure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1967-1969 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A so-called "three-partial-rates'' model of Si1−x Gex chemical vapor deposition that describes total growth rate as well as layer composition is applied to experimental data obtained at atmospheric pressure in hydrogen along with germane. The kind of silicon source gas was varied in that investigation using silane, dichlorosilane, and disilane, whereas all the other deposition conditions were maintained constant. Theoretical expectations drawn on the background of the above model agree fairly well with the experimental findings. All the experimental results this letter is related to were independently obtained and published [T. I. Kamins and D. J. Meyer, Appl. Phys. Lett. 61, 190 (1992)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109505
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