Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1451-1453
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated homogeneous, photoconductive semiconductors as very fast radiation detectors. We irradiated GaAs, Cr-doped GaAs, and Fe-doped InP crystals with 14 MeV neutrons to produce lattice defects that act as fast recombination centers for electrons and holes. Using short-pulse lasers and 17 MeV linear-accelerator electrons and bremsstrahlung x rays, we measured the temporal response and sensitivity of these photoconductors as functions of fluence ranging from 1012 to 1016 neutrons/cm2. The carrier lifetime and mobility decrease monotonically as the neutron fluence increases, resulting in faster detector response at the expense of sensitivity. A resolving time of less than 30 ps (full width at half maximum) was measured for the above photoconductors irradiated with ∼1015 neutrons/cm2.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100694
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