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  • 1
    Electronic Resource
    Electronic Resource
    The nonproportionality of interface-trap generation to hole trapping efficiency in metal-oxide-silicon devices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1844-1846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The susceptibility to hole trapping of the gate oxide of a metal-oxide-silicon (MOS) device is not necessarily proportional to the efficiency of interface trap generation at the Si-SiO2 interface, which is widely believed due to the recombination of electrons and trapped holes in the oxide close to the interface. In this study, an oxide given a high-temperature (1000 °C) anneal, which increases the hole trapping efficiency of the oxide, is shown to have much less generated interface traps compared to a normal oxide (without high-temperature annealing) upon exposing to ionizing radiation with subsequent electron injection, or high-field injection alone. Under high-field tunneling injection, the electron fluence required to create a certain density of interface trap is an order of magnitude higher for the annealed oxide compared to the normal oxide. These results could provide a possible direction for improving the reliability of the gate oxide of a MOS field-effect transistor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349502
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electron-trap generation by recombination of electrons and holes in SiO2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4544-4548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that after holes are injected and trapped in silicon dioxide (SiO2), subsequent electron injection will generate neutral electron traps. The density of electron traps generated is about 30% of the density of trapped holes. It is proposed that electron traps are created by the energy released through the recombination of electrons and holes, and that this is the mechanism of electron-trap generation during high-field oxide stressing. Similar oxide field and thickness dependencies of the rate of electron-trap generation and hole generation further support this model. This model can reconcile the main evidence for the electron-trapping oxide breakdown model with the hole-trapping breakdown model. It is consistent with the higher trap generation rate in irradiated SiO2. An analytical trapping model is derived and the electron capture cross sections of trapped holes and the generated neutral traps are found to be 10−14 cm2 and 5×10−16 cm2, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338388
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  • 3
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    Characterization and reduction of microfabrication-induced decoherence in superconducting quantum circuits (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-15
    Description: Many superconducting qubits are highly sensitive to dielectric loss, making the fabrication of coherent quantum circuits challenging. To elucidate this issue, we characterize the interfaces and surfaces of superconducting coplanar waveguide resonators and study the associated microwave loss. We show that contamination induced by traditional qubit lift-off processing is particularly detrimental to quality factors without proper substrate cleaning, while roughness plays at most a small role. Aggressive surface treatment is shown to damage the crystalline substrate and degrade resonator quality. We also introduce methods to characterize and remove ultra-thin resist residue, providing a way to quantify and minimize remnant sources of loss on device surfaces.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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