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  • American Institute of Physics (AIP)  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt–Ti–SiO2–Si wafer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2699-2702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical constants of highly (100)-oriented LaNiO3 thin films on Pt(111)-Ti–SiO2–Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range from ultraviolet to far infrared. In fitting the dielectric functions of LaNiO3, two harmonic oscillators are observed, one is believed to come from the valence–conduction interband transition and the other is attributed to the transition from a donor band to the conduction. Simultaneously the frequency of plasmon is also obtained, which results from the strong electron–electron interaction. Based on these optical and electrical properties, a promising application of LaNiO3 thin films in infrared microsensors has been proposed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394903
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  • 2
    Electronic Resource
    Electronic Resource
    Subband electron properties of modulation-doped AlxGa1−xN/GaN heterostructures with different barrier thicknesses (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 374-376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetotransport properties of modulation-doped Al0.22Ga0.78N/GaN heterostructures with different barrier thicknesses of 25–100 nm have been investigated in magnetic fields up to 9 T at 1.4 K. Fast Fourier transform has been applied to obtain the subband density and mobility of the two-dimensional electron gas in these heterostructures. High electron density of 1.18×1013 cm−2 and quantum mobility of ∼8200 cm2 V−1 s−1 are obtained when the barrier thickness is 75 nm, which indicates that there exists a critical barrier thickness between 50 and 100 nm in the modulation-doped Al0.22Ga0.78N/GaN heterostructures. We also find that the elastic strain relaxation of the barrier does not significantly enhance the quantum mobilities of the ground subbands, however, it has strong effect on the mobilities of the excited states. The experimental values obtained in this work are useful for the design and optimization AlxGa1−xN/GaN device. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1386620
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  • 3
    Electronic Resource
    Electronic Resource
    Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1909-1911 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Shubnikov–de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K. By analyzing the experimental data using fast Fourier transform, the electron densities and mobilities of more than one subband are obtained, and an obvious double-peak structure appears at high magnetic field in the Fourier spectrum. In comparing the results of SdH measurements, Hall measurements, and theoretical calculation, we found that this double-peak structure arises from spin splitting of the first-excited subband (i=1). Very close mobilities of 5859 and 5827 cm2/V s are deduced from this double-peak structure. The sum of the carrier concentration of all the subbands in the quantum well is only 3.95×1012 cm−2 due to incomplete transfer of the electrons from the Si δ-doped layer to the well. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396625
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  • 4
    Electronic Resource
    Electronic Resource
    Longitudinal optic phonon–plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1375-1377 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon–plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396818
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  • 5
    Electronic Resource
    Electronic Resource
    Infrared optical properties of LaNiO3–platinized silicon and PbZrχTi1−χO3–LaNiO3–platinized silicon heterostructures (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 793-795 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using infrared spectroscopic ellipsometry, the optical constants of LaNiO3 thin films on Pt(111)–Ti–SiO2–Si substrates are obtained in the 2.5–12.6 μm range, in which the infrared optical constants decrease when the annealing temperature increases from 600 to 650 °C. At the same time, the infrared optical properties of PbZrχTi1−χO3(PZT) thin films with χ=0.3 and 0.5 on LaNiO3–Pt–Ti–SiO2–Si substrates are simultaneously studied with respect to annealing temperatures. The infrared optical properties are associated closely with the grain size and crystallographic orientation of the films induced by annealing temperature, combined by the particular substrate. For the Ni–PZT–LaNiO3–Pt multilayer heterostructures, the infrared absorptance better than 99% can be achieved for PZT pyroelectric thin film infrared microsensors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347403
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