ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electron transport in a Si metal-oxide-semiconductor (MOS) inversion layer was investigated by Monte Carlo particle simulation. Two models were used: (1) Electrons in the MOS inversion layer were treated as being two dimensional, taking account of the three lowest subbands. (2) Electrons in the MOS inversion layer were treated in one of two ways, depending on their energy: Electrons with energy less than the threshold energy Eth were treated as being two dimensional, while electrons with energy larger than Eth were treated as being in bulk Si. The simulated results of the dependence of the drift velocity on the tangential electric field Et and the electric field En normal to the MOS inversion layer were compared with the experimental results obtained by using the time-of-flight method of Cooper and Nelson [J. Appl. Phys. 54, 1445 (1983)]. As a result, we found that the simulation result of the first model diverges from the experimental results as Et increases and En decreases, and that the second model agrees well with the experimental results. These simulation results suggest that it is important to take account both of the behavior of two-dimensional electrons and bulk Si electrons in the MOS inversion layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349568
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