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  • 1
    Electronic Resource
    Electronic Resource
    Observation of subbands in the GaAlAs on two-dimensional electron gas field-effect transistor structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 33-35 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the current-voltage characteristics and its derivatives on GaAs-GaAlAs field-effect transistor samples having a semitransparent Au-Schottky gate contact, varying the band structure by illumination. In these samples electrons tunnel from the two-dimensional electron gas through the GaAlAs into a Schottky gate. Sharp peaks are observed in dI/dV after illumination at liquid-helium temperature. Using a self-consistent model, we are able to explain these peaks by resonant tunneling via subband states in the GaAlAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99308
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  • 2
    Electronic Resource
    Electronic Resource
    Strongly directional emission from AlGaAs/GaAs light-emitting diodes (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2327-2329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show for the first time that strongly directional emission of defined polarization can be achieved from conventional AlGaAs/GaAs double-heterostructure surface-emitting light-emitting diodes (LEDs) via coupling to surface plasmons. By microstructuring the surface, we have fabricated LEDs with a beam divergence of less than 4° and an increased quantum efficiency. It is demonstrated that the surface plasmon excitation and emission mechanism have the potential to improve the performance of LEDs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103883
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  • 3
    Electronic Resource
    Electronic Resource
    Incorporation of Si in δ-doped GaAs studied by local vibrational mode spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 978-980 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering by local vibrational modes has been used to study the incorporation of Si in single δ-doped GaAs layers. Placing the doping spike at different depths underneath the surface, a depth profile of the dopant concentration incorporated on lattice sites has been obtained. For samples grown by molecular beam epitaxy under conditions which are known to lead to a significant broadening of the doping spike, the applied Raman technique reveals the incorporation of Si on Ga sites with a broadening of the Si distribution in excess of 20 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101695
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  • 4
    Electronic Resource
    Electronic Resource
    "Confined'' water and hydrophobic attraction as a result of metastable coordination, stabilized by hydrophobic surfaces (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 3378-3389 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The hydrophobic hydration and interaction between hydrophobic surfaces are treated as a "wetting phenomenon'' in terms of a phenomenological Landau–Ginzburg approach. The model is based on the assumption that the breakdown of hydrogen bonds at a hydrophobic wall can stabilize a layer of four-coordinated water near the surface. The theory predicts the formation of more structured, four-coordinated, confined water between two hydrophobic surfaces, when the two layers overlap. A peculiar shape of the disjoining pressure isotherm follows from this picture, including exponential attraction at short and long distances (with longer decay length at short distances), a plateau in between, ended by a jump (first order transition) to the exponential decay at large distances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468413
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  • 5
    Electronic Resource
    Electronic Resource
    Periodic, quasiperiodic, and chaotic potentials generated by electrochemical concentration cells: Local and global dynamics (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 5126-5135 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We extend previous work describing the passive electrical coupling of two periodic chemical states to include quasiperiodic and chaotic states. Our setup resembles an electrochemical concentration cell (a battery) whose half cells [continuous-flow stirred tank reactors (CSTRs)] each contain the Belousov–Zhabotinsky (BZ) reaction. For a closed electrical circuit the two half cells are weakly coupled by an external variable resistance and by a constant low mass flow. This battery may produce either periodic, quasiperiodic, or chaotic alternating current depending on the dynamic BZ states chosen in the half cells. A lower fractal dimensionality is calculated from the electrical potential of a single chaotic CSTR than from the difference potential (relative potential) of the two chaotic half cell potentials. A similar situation is observed in model calculations of a chaotic spatiotemporal system (the driven Brusselator in one space dimension) where the dimensionality derived from a local time series is lower than the dimensionality of the global trajectory calculated from the Karhunen–Loeve coefficients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467368
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