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  • 1
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    Inverse spin Hall effect in Pt/(Ga,Mn)As (2015)
    American Institute of Physics (AIP)
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    Publication Date: 2015-06-04
    Description: We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10 19  m −2 , which is about ten times greater than that of (Ga,Mn)As/p-GaAs.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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    The role of beryllium in the band structure of MgZnO: Lifting the valence band maximum (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-09-26
    Description: We investigate the effect of Be on the valence band maximum (VBM) of MgZnO by measuring the band offsets of Mg x Zn 1−x O/Be x Mg y Zn 1−x−y O heterojunctions using X-ray photoelectron spectroscopy measurements. Mg x Zn 1−x O and Be x Mg y Zn 1−x−y O films have been grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The valence band offset ( Δ E V ) of Mg 0.15 Zn 0.85 O ( E g  = 3.62 eV)/Be 0.005 Mg 0.19 Zn 0.805 O ( E g  = 3.73 eV) heterojunction is 0.01 eV and Be 0.005 Mg 0.19 Zn 0.805 O has a lower VBM. The increased Mg composition is the main factor for the reduction of VBM. The VBM of Mg x Zn 1−x O is lower by 0.03 eV with the enlargement of E g from 3.62 eV to 3.73 eV by increasing Mg composition. Considering the effect of increased Mg composition, it is concluded that the little amount of Be makes the VBM go up by 0.02 eV when the E g of the alloy is 3.73 eV. The Δ E V of Mg 0.11 Zn 0.89 O ( E g  = 3.56 eV)/Be 0.007 Mg 0.12 Zn 0.873 O ( E g  = 3.56 eV) heterojunction is calculated to be 0.03 eV and Be 0.007 Mg 0.12 Zn 0.873 O has a higher VBM than Mg 0.11 Zn 0.89 O, which means that a little amount Be lifts the VBM by 0.03 eV when the E g of the alloy is 3.56 eV. The experimental measurements have offered a strong support for the theoretical research that alloying Be in Mg x Zn 1−x O alloys is hopeful to form a higher VBM and to enhance the p-type dopability of MgZnO.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
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