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  • American Institute of Physics (AIP)  (7)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 288-290 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present semianalytical calculations of the valence subband structure for 〈011〉-oriented quantum wells of cubic semiconductors. Working in the Kohn–Luttinger formalism [Phys. Rev. 97, 869 (1955)], we present analytic expressions for the effective mass tensor and show the full subband dispersion for GaAs and InAs. In addition to the usual extremum at k(parallel)=0, 〈011〉-oriented wells support saddle point spectra. In this case, the effective mass changes sign as a function of in-plane crystallographic direction. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 887-889 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the interaction of light pulses with a GaAs/AlAs resonant tunneling structure. We demonstrate that light with an average power of less than 10 μW can induce switching, and show that switching is accompanied by a change in the optical absorption. These results suggest a number of new applications for the resonant tunneling structure, including light-by-light switching.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1356-1358 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence, electroluminescence, and current measurements are used to probe the internal field in an n+-n-n+ GaAs/AlGaAs superlattice. At low bias voltages, the photoluminescence spectrum shows several peaks arising from electric field domains in the superlattice. Their positions correlate with features in the current-voltage characteristic and are consistent with a simple calculation of the Stark shift. Above the threshold voltage for impact ionization we observe spectrally narrow electroluminescence (width 3.5 meV). The energy of this emission coincides with the zero-field photoluminescence signal, indicating that electrons and holes screen the applied electric field in the quantum wells.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2584-2586 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed the transition from type I (spatially direct) to type II (spatially indirect) in GaAs/AlGaAs asymmetric coupled quantum well structures at 10 K. The transition is manifested as a strong electric field induced quenching of the photoluminescence which correlates well with the results of a single particle calculation of the electron-hole overlap. By properly designing the coupled well structure, photoluminescence quenching (90%–10%) is observed for a change in bias field of only 5 kV/cm. Observations of the absorption spectrum clearly demonstrate that the type I–type II transition occurs by an electronic level anticrossing. Owing to the large level repulsion, a Stark shift of 5 meV is observed when the bias field is switched by only 18 kV/cm.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 13-15 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the phase locking of an oscillating GaAs/AlGaAs resonant tunneling diode (RTD) to a train of optical pulses. Locking was achieved by direct illumination of a specially designed RTD with a diode laser pulse train. Locking occurs at all rational frequency ratios and with excitation energies as low as 0.1 pJ/pulse for the principle lock.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3095-3097 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use an oscillating resonant tunneling diode as the driver of an external cavity diode laser to produce active mode locked light pulses in the picosecond range. We demonstrate dc voltage-controlled uniform temporal positioning, or time shifting, or the laser pulses with reference to a synthesizer based reference signal. This may be very useful for picosecond time-resolved applications.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 3 (1991), S. 1773-1780 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modification of the plasma beat-wave excitation scheme is proposed, aimed at a significant increase of the resulting plasma wave amplitude. The modification employs two laser beams with a down-chirped beat frequency that follows, on the average, the amplitude-dependent frequency of the intense plasma wave. Numerical and analytical calculations that support the proposed scheme are presented. Also, new analytical solutions for the constant beat-frequency case are obtained. Finally, a plausible experimental setup is suggested, where one of two CO2 laser beams attains the necessary frequency chirp by passing through a diffraction grating pair.
    Type of Medium: Electronic Resource
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