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  • American Institute of Physics (AIP)  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Luminescent properties of ZnS:Mn films deposited by spray pyrolysis (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1525-1527 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room temperature, photoluminescent properties of manganese-doped zinc sulfide films deposited by spray pyrolysis are reported. These films were deposited on Pyrex glass substrates at atmospheric pressure using air as a carrier gas. All films were polycrystalline with a wurtzite (hexagonal) structure. The manganese doping was achieved by mixing MnCl3 with the starting solution to deposit ZnS. The photoluminescence spectra was measured at room temperature as a function of the different deposition parameters and the Mn concentration. Besides the characteristic light emission associated with Mn impurities in a ZnS matrix, a peak associated with the self-activated emission was also observed under certain deposition conditions (low substrate temperatures and/or long deposition times). The presence of chlorine impurities in the films is suggested to be associated with this emission. The Mn luminescence presents a quenching effect with the Mn concentration. This quenching effect is similar to the one reported on films deposited by other techniques. The light emission at this center has an activation energy of 0.71±0.05 eV with the deposition temperature. This energy is proposed to be related with the energy required by the Mn atoms to find a proper site during the growth process to form a Mn2+ center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351720
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence characteristics of undoped and terbium chloride doped zinc oxide films deposited by spray pyrolysis (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2378-2381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence characteristics of undoped and TbCl3-doped zinc oxide films deposited by the spray pyrolysis technique are reported. Undoped films present the characteristic blue-green emission peak at ∼508 nm observed in single-crystal and powder ZnO. The TbCl3-doped films present a luminescence peak at ∼540 nm. The light emission of the doped films decreases with time of exposure of the sample to the excitation light. The phenomenon is interpreted in terms of a simple model in which a competitive process of hole trapping and phototrapping occurs at a radiative recombination center generated by the TbCl3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341055
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical and stoichiometric characteristics of CdTe films deposited by the hot-wall flash-evaporation technique (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5076-5079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and stoichiometric characteristics of polycrystalline CdTe films deposited by the hot-wall flash-evaporation technique are reported for different deposition parameters. The crystallites in these films grow in a columnar type of grain. The stoichiometry of the films is largely dependent on substrate (Ts) and wall temperatures (Tw) during deposition. At low values of Ts and Tw (∼92 and 425 °C, respectively) a large excess of Te is present (∼30 at. %). At Ts(approximately-equal-to)192 °C and Tw(approximately-equal-to)560 °C, nearly stoichiometric films were obtained. The electrical characteristics were strongly dependent on the amount of excess Te present in the samples. A change in the resistivity of up to seven orders of magnitude was measured between the samples with ∼30 at. % of excess Te and those with a stoichiometry close to 1:1. Also a large difference in the resistivity measurements was observed on the surface and across the samples for the different deposition conditions studied. The behavior of the resistivity with temperature in the 100–500 K range is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338957
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  • 4
    Electronic Resource
    Electronic Resource
    Electroluminescence emission from indium oxide and indium-tin-oxide (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3556-3558 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence emission from indium-tin-oxide (ITO) and indium oxide films incorporated in a Si-rich SiO2-SiO2-ITO (In2O3) multiple-layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In2O3. The intensity of the light is found to depend on the applied electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335730
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  • 5
    Electronic Resource
    Electronic Resource
    Degradation of the electrical characteristics of the Si–SiO2 interface induced by electron injection (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3787-3791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of electron injection on the electrical characteristics of the Si–SiO2 interface have been studied on metal-oxide-semiconductor type structures incorporating very thin oxide films ((approximately-less-than)200 A(ring)). Electron current across the oxide is obtained by Fowler–Nordheim tunneling in Al:SiO2:Si structures or by enhanced Fowler–Nordheim tunneling in Al:Si-rich-SiO2:SiO2:Si devices. The changes induced by charge injection in these structures were monitored by measuring the 1-MHz and the quasistatic capacitance versus voltage characteristic curves. In both structures negative charge trapping in the oxide and positive charge accumulation were observed as well as generation of interface states at approximately 0.6 eV from the top of the Si valence band. However, in structures with Si-rich-SiO2 layers an anomalous peak in the quasistatic capacitance curves was observed to be induced by the injection of electrons. The role of the Si-rich-SiO2 layer in these phenomena is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336767
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