Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 1223-1225
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electroluminescence (EL) and electrophysical characteristics of erbium and oxygen coimplanted and annealed p–n junctions, characterized by higher values of the Er3+-related EL intensity at ∼1.54 μm in the breakdown regime at 300 K as compared with that at 85 K, have been studied in the temperature range from 85 to 300 K. Hole traps in the Er–O codoped n layer were found to be responsible for the anomalous EL behavior. Er-related EL was observed in the same samples in avalanche breakdown at high temperatures and in tunnel breakdown at low temperatures. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121020
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