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  • American Institute of Physics (AIP)  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Investigation of compensation defects in CdTe:Cl samples grown by different techniques (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6667-6670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed analysis of the photoinduced current transients of differently grown CdTe:Cl samples was performed in the 100–140 K range in order to investigate the influence of different growth techniques (sublimation, Bridgman method, and traveling heater method) on compensation defects. While studying the experimental results the analysis of the transients turned out to be a crucial point. With the conventional two-gate technique only one trap with misleading trap parameters could be identified in each sample. Analyzing the transients with the regularization method proposed recently [C. Eiche, D. Maier, M. Schneider, D. Sinerius, J. Weese, K. W. Benz, and J. Honerkamp, J. Phys. Condens. Matter 4, 6131 (1992)], three traps could be identified in each sample. Only one of these traps leads to an activation energy and a cross section approximately the same for the different samples. The other two traps of each sample depend on the growth technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355109
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  • 2
    Electronic Resource
    Electronic Resource
    High resolution method for the analysis of admittance spectroscopy data (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3851-3857 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There are several experimental methods which give information about the thermal relaxation times of the deep levels in a semiconductor. Analyzing the temperature dependence of the relaxation times, the activation energy and the cross section of the corresponding deep levels can be determined. An essential problem of such methods is the identification of the relaxation times in the measured signal. In the context of time-dependent measurements such as photoinduced current transient spectroscopy and deep level transient spectroscopy, Tikhonov regularization was recently proposed as a high resolution method for this purpose. In this contribution it is proposed to apply Tikhonov regularization in order to identify the thermal relaxation times in admittance spectroscopy data. The method is tested and discussed using simulated data. Finally, admittance spectroscopy data of a GaAs diode are analyzed. The results demonstrate that the resolution of an ordinary admittance spectroscopy setup can considerably be improved by the application of Tikhonov regularization. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358562
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  • 3
    Electronic Resource
    Electronic Resource
    Comment on "Inverse problem for the nonexponential deep level transient spectroscopy analysis in semiconductor materials with strong disorder: Theoretical and computational aspects'' [J. Appl. Phys. 74, 291 (1993)] (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1242-1242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that a recently proposed analysis of deep level transient spectroscopy signals with a regularization method by Batovski et al. [J. Appl. Phys. 74, 291 (1993)] can be simplified significantly by calculating the relaxation time spectrum of the capacitance transient with a regularization method directly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356466
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  • 4
    Electronic Resource
    Electronic Resource
    Modified compensation model of CdTe (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6689-6692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The traditional compensation model to explain the high resistivity properties of CdTe is based on the presence of a deep acceptor level of the cadmium vacancy in the middle of the band gap. A new compensation model based on a deep intrinsic donor level is presented. The compensation model is used together with an appropriate segregation model to calculate axial distributions of resistivity which are compared with spatially resolved resistivity measurements. The Te-antisite defect is discussed as a possible origin cause of this intrinsic defect, which is also supported by theoretical calculations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368874
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