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  • 1
    Electronic Resource
    Electronic Resource
    Classical and quantum magnetism in synthetic ferritin proteins : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5324-5326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of nanometer-scale particles are studied using the protein-complex ferritin as a vesicle for either an antiferromagnet or a ferrimagnet. For antiferromagnetic ferritin particles, the anisotropy energy is found to depend linearly on the particle volume, suggesting that bulk anisotropy dominates over surface anisotropy. Effects due to the bulk and surface spins are discerned at high magnetic fields (27 T). At very low magnetic fields (1 nT) and temperatures (20 mK), the tunneling frequency of the Néel vector is observed to scale exponentially with the particle volume, consistent with the linear dependence of the anisotropy barrier on volume and with theories of macroscopic quantum coherence. In the ferrimagnetic particles, the anisotropy barrier decreases for smaller particles while simultaneously displaying a slight increase in coercivity and a dramatic decrease in the remanence over three orders of magnitude. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361366
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  • 2
    Electronic Resource
    Electronic Resource
    Vortex pinning in microindented YBa2Cu3O7−x single crystals (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1541-1546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high resolution magneto-optical technique with a magnetic indicator film was used to study the effect of a regular array of micrometer-sized mechanical indentations on magnetization dynamics at the surface of a twinned single crystal of YBa2Cu3O7−δ as a function of applied magnetic field, Ha (0 to ±68 mT) at temperatures in the range of 10–70 K. Direct visualization of the magnetic flux interaction with the individual indentations was observed for the first time. During magnetization at low Ha up to 15 mT at 60 K, the first row of indentations provides resistance to the flux front. In the indented area, flux is preferably pinned at the indentation sites. With increasing Ha, the vortex density at the indentations approaches the magnetic flux density in the surrounding material. During demagnetization down to Ha=0 mT, the outgoing flux is trapped by the indentations in areas where the density of the trapped flux is small; flux is also trapped along the (110) twin boundaries behind the indentations. For Ha=0 to ±10 mT, the average value of the magnetic induction gradient in the vicinity of an indentation is (approximate)0.4 mT/μm at 20–60 K. The average induction gradient and, thus, the critical current density in the indented material is estimated to be 1.5–2 times greater than in the unindented material at temperatures from 40 to 70 K and Ha from 18 to 68 mT. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373852
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  • 3
    Electronic Resource
    Electronic Resource
    A fast scan submillimeter spectroscopic technique (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1675-1683 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new fast scan submillimeter spectroscopic technique (FASSST) has been developed which uses a voltage tunable backward wave oscillator (BWO) as a primary source of radiation, but which uses fast scan (∼105 Doppler limited resolution elements/s) and optical calibration methods rather than the more traditional phase or frequency lock techniques. Among its attributes are (1) absolute frequency calibration to ∼1/10 of a Doppler limited gaseous absorption linewidth (〈0.1 MHz, 0.000 003 cm−1), (2) high sensitivity, and (3) the ability to measure many thousands of lines/s. Key elements which make this system possible include the excellent short term spectral purity of the broadly (∼100 GHz) tunable BWO; a very low noise, rapidly scannable high voltage power supply; fast data acquisition; and software capable of automated calibration and spectral line measurement. In addition to the unique spectroscopic power of the FASSST system, its implementation is simple enough that it has the prospect of impacting a wide range of scientific problems. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147970
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  • 4
    Electronic Resource
    Electronic Resource
    Selective low-pressure chemical vapor deposition of Si1−xGex alloys in a rapid thermal processor using dichlorosilane and germane (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2092-2094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-pressure chemical vapor deposition of Si1−xGex alloys in a cold wall, lamp-heated rapid thermal processor was studied. Alloys were deposited using the reactive gases GeH4 and SiH2Cl2 in a hydrogen carrier gas. The depositions were performed at a total pressure of 2.5 Torr and at temperatures between 500 and 800 °C using GeH4:SiH2Cl2 ratios ranging from 0.025 to 1.00. Results showed that Si1−xGex alloys can be deposited selectively on silicon in SiO2. The selectivity is enhanced significantly by the addition of GeH4 in the gas stream. In this work, selective depositions were obtained when the GeH4:SiH2Cl2 gas flow ratio was greater than 0.2 regardless of the deposition temperature, corresponding to a Ge content of 20% or higher in the films as determined by Auger electron spectroscopy. An enhancement in the deposition rate was observed in agreement with earlier reports due to the addition of GeH4. The activation energy for deposition in the surface reaction limited regime varied from 20 to 30 kcal/mole with the gas flow ratios used in this study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103951
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature dependence of the elastic constants of solid and liquid Cd0.96Zn0.04Te obtained by laser ultrasound (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4124-4133 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser based ultrasonic techniques provide a potential noninvasive sensing methodology to monitor the solid–liquid interface shape and position during crystal growth provided, the temperature dependence of the ultrasonic velocity for both solid and liquid phases are known a priori. A laser ultrasonic approach has been used to measure the ultrasonic velocity of single crystal solid and liquid Cd0.96Zn0.04Te as a function of temperature. The longitudinal wave velocity was found to be a strong monotonically decreasing function of temperature in the solid and liquid phases and exhibited an abrupt almost 50% decrease upon melting. Using both longitudinal and shear wave velocity values together with data for the temperature dependent density allowed a complete evaluation of the temperature dependent single crystal elastic stiffness constants (C11, C12, C44) for the solid and the adiabatic bulk modulus (KS) for the liquid. In addition, evaluation of the thermoelastic modulus (MT) has given insight on the impact of dislocation generation from excessive thermal gradient induced stresses during growth. The simplicity of making high temperature laser ultrasonic measurements together with the large longitudinal wave velocity difference between the solid and liquid phases suggests a laser based ultrasonic sensor has significant potential for sensing the solid–liquid interface during the growth of CdTe alloys. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367166
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