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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3012-3014 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering of copper by keV implantation of germanium into silicon is investigated. Germanium is implanted at a fixed energy with varying doses into the front side of silicon samples. Copper is thermally evaporated on the backside of the samples and then annealed at 900 °C for 1 h and 10 h, respectively, to allow in-diffusion of the transition metal. Rutherford backscattering spectroscopy, secondary-ion-mass spectroscopy, and cross-section transmission electron microscopy are used to demonstrate that gettering of copper is achieved through stacking faults created by heavy dose germanium implantation and solid-phase epitaxy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1081-1084 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multichannel millimeter-wave interferometer system has been designed, fabricated and installed on the helically symmetric experiment (HSX), located at the University of Wisconsin, Madison. The interferometer system will view the plasma cross section along nine adjacent chords with 1.5 cm spacing. With this arrangement, coverage will span from the low-field side plasma scrape-off layer to well past the magnetic axis. For the plasma densities anticipated on HSX, a solid-state source operating at 288 GHz will be utilized. At this frequency refraction will be manageable, being less than the channel spacing. The source will be bias-tuned and modulated with a sawtooth wave form at 750 kHz in order to generate the intermediate frequency necessary for the heterodyne detection scheme. The signals will be measured using Schottky-diode corner-cube mixers. The interferometer will have sensitivity nedl(approximate)8×1011 cm−2, being able to measure density changes 〈1%. Initially, the phase will be evaluated using analog electronics with bandwidth 〈10 kHz providing real-time line-integrated output. A digital phase comparator scheme will also be implemented whereby the measured wave forms are directly digitized and the phase evaluated using a software-based algorithm. This will increase the time response up to the modulation frequency of 750 kHz. Improved time response will permit measurement of high-frequency density fluctuations along with "fast changes in" the equilibrium profile. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3734-3736 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (100)Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Ultrasmall dimension GeSi surface wire structures are then formed in Si in a pulsed laser-induced epitaxy process. The wire structures are analyzed by secondary electron microscopy, atomic force microscopy, Auger electron spectroscopy, and cross-sectional transmission electron microscopy. No defects are observed in the wires structures. However, significant side diffusion of Ge, much more than the vertical diffusion occurred during the ∼40 ns pulsed laser-induced epitaxy process, is observed in the Si substrate. Surface evolution is also observed. Possible explanations for the abnormal Ge side diffusion are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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