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  • American Institute of Physics (AIP)  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3900-3904 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to characterize the electron transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN modulation-doped field-effect transistors, channel magnetoresistance has been measured in the magnetic field range of 0–12 T, the temperature range of 25–300 K, and gate bias range of +0.5 to −2.0 V. By assuming that the 2DEG provides the dominant contribution to the total conductivity, a one-carrier fitting procedure has been applied to extract the electron mobility and carrier sheet density at each particular value of temperature and gate bias. Consequently, the electron mobility versus 2DEG sheet density has been obtained for each measurement temperature. Theoretical analysis of these results suggests that for 2DEG densities below 7×1012 cm−2, the electron mobility in these devices is limited by interface charge, whereas for densities above this level, electron mobility is dominated by scattering associated with the AlGaN/GaN interface roughness. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372432
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  • 2
    Electronic Resource
    Electronic Resource
    Scanning laser microscopy of reactive ion etching induced n-type conversion in vacancy-doped p-type HgCdTe (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3443-3445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-beam-induced-current measurements have been used to characterize the extent of reactive ion etching (RIE) induced type conversion in vacancy-doped p-type Hg0.69Cd0.31Te. The technique allows the spatial extent of RIE induced type conversion to be determined and the donor level concentration profile within the n-type converted region to be estimated. For the RIE processing conditions used (410 mT, CH4/H2, 0.4 W/cm2) and an etch depth of 0.2 μm, n-type conversion extending ∼1.5 μm into the semiconductor was observed. The simple and powerful approach developed in this work is of general application to the study of semiconductor junctions, and can be applied to a range of processing techniques used in the formation of p-n junctions in HgCdTe (e.g., epitaxially grown heterojunctions, ion implantation, ion milling and Hg in-diffusion). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119159
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  • 3
    Electronic Resource
    Electronic Resource
    Wide optical bandwidth asymmetric Fabry–Pérot reflection modulator using the quantum confined Stark effect (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5761-5765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A normally on, high-performance quantum confined Stark effect asymmetric Fabry–Pérot reflection modulator with enhanced optical bandwidth is reported. The wide optical bandwidth is achieved by utilizing the variation in refractive index in the vicinity of the heavy-hole exciton. The nominal operating wavelength is set in the region where the on-state refractive index starts to increase and allows the Fabry–Pérot resonance condition to be maintained over a wide wavelength range. An optical bandwidth of 5 nm is achieved for an operating voltage of 7 V, insertion loss 〈2.5 dB, reflectance change 〉55% and contrast ratio 〉15 dB, and 7 nm if the contrast ratio is relaxed to 〉10 dB. These values are twice as wide as previously reported for a quantum confined Stark effect modulator structure, and correspond to an operating temperature range of 25 °C compared to 10 °C for conventional structures. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368867
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2996-3002 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental magnetic field dependent Hall and resistivity data is presented for two modulation-doped AlGaN/GaN heterostructures in the temperature range from 6 to 300 K and for a magnetic field up to 12 T. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface and within the underlying GaN layer are readily separated and characterized using quantitative mobility spectrum analysis. The observed transport parameters of the 2DEG are explained using the classical band theory for a degenerate electron gas. Analysis of the temperature dependencies of mobility and electron concentration in the GaN layer and 2DEG indicates that electron transport in the GaN layer is dominated by carriers in the conduction band for the case of low-doping (〈1017 cm−3), and by conduction via an impurity band for highly doped material (〉1018 cm−3). The simultaneous analysis of the multilayer AlGaN/GaN structure applied in this work renders the results applicable directly to modulation-doped field-effect transistors based on similar structures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366137
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  • 5
    Electronic Resource
    Electronic Resource
    Mercury annealing of reactive ion etching induced p- to n-type conversion in extrinsically doped p-type HgCdTe (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5555-5557 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type regions created during RIE processing. For the RIE processing conditions used (400 mT, CH4/H2, 90 W), p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200 °C for 17 h, LBIC measurements clearly indicated that no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a uniform p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA−ND=2×1016 cm−3, μ=350 cm2 V−1 s−1). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367389
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  • 6
    Electronic Resource
    Electronic Resource
    Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 52-54 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantitative assessment of p- to n- type conversion due to reactive ion etching (RIE) of p-type Hg0.71Cd0.29Te is presented using laser-beam-induced-current (LBIC) measurements. For the RIE processing conditions used (390 mT, CH4/H2, 0.4 W/cm2), n-type conversion was observed in extrinsic arsenic-doped p-type Hg0.71Cd0.29Te which had previously undergone a Hg anneal to eliminate Hg vacancies. Effective doping density of the n-type converted region is determined by fitting a theoretically determined LBIC signature to the measured LBIC signal over a temperature range 80–300 K. Effective n-type doping density is the only fitting parameter used in the simulation, which was carried out using a commercial semiconductor device modeling package (SEMICAD™ DEVICE). This noncontact experimental technique promises to be a useful tool in the characterization of p-n junction diodes in HgCdTe, and for studying the precise nature of p to n conversion in p-type HgCdTe. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120642
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